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NTD20N03L27T4G

ON Semiconductor NTD20N03L27T4G

Part Number:
NTD20N03L27T4G
Manufacturer:
ON Semiconductor
Ventron No:
2478291-NTD20N03L27T4G
Description:
MOSFET N-CH 30V 20A DPAK
ECAD Model:
Datasheet:
NTD20N03L27, NVD20N03L27

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Specifications
ON Semiconductor NTD20N03L27T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N03L27T4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    27MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    1.75W Ta 74W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    74W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 10A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1260pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18.9nC @ 10V
  • Rise Time
    137ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    31 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    1.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Avalanche Energy Rating (Eas)
    288 mJ
  • Nominal Vgs
    1.6 V
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD20N03L27T4G Description
NTD20N03L27T4G is a 30v Single N-Channel Logic Level Power MOSFET. The onsemi NTD20N03L27T4G  is a general-purpose part that provides the "best of design" available today in a low-cost power package. Avalanche energy issues make this part an ideal design. The drain-to-source diode has an ideal fast but soft recovery. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD20N03L27T4G is in the TO-252-3 package with 74W power dissipation.

NTD20N03L27T4G Features
Ultra-Low RDS(on), Single Base, Advanced Technology
SPICE Parameters Available
The diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
High Avalanche Energy Specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
RoHS Compliant

NTD20N03L27T4G Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTD20N03L in many Applications
NTD20N03L27T4G More Descriptions
NTD20N03L27T4G N-channel MOSFET Transistor; 20 A; 30 V; 3-Pin DPAK
Single N-Channel Logic Level Power MOSFET 30V, 20A, 27mΩ
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,20A I(D),TO-252AA;
N-Channel 30 V 27 mOhm 74 W Tab Mount Power MOSFET - TO-252-3
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.6V; Product Range:-Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTD20N03L27T4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    View Compare
  • NTD20N03L27T4G
    NTD20N03L27T4G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    27MOhm
    Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    260
    20A
    40
    3
    R-PSSO-G2
    1
    1.75W Ta 74W Tc
    Single
    ENHANCEMENT MODE
    74W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    27m Ω @ 10A, 5V
    2V @ 250μA
    1260pF @ 25V
    20A Ta
    18.9nC @ 10V
    137ns
    4V 5V
    ±20V
    31 ns
    38 ns
    20A
    1.6V
    20V
    30V
    60A
    288 mJ
    1.6 V
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • NTD24N06-001
    NTD24N06-001
    ON Semiconductor
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    -
    -
    24A
    -
    -
    -
    -
    1.36W Ta 62.5W Tj
    Single
    -
    62.5W
    -
    -
    N-Channel
    -
    42m Ω @ 10A, 10V
    4V @ 250μA
    1200pF @ 25V
    24A Ta
    48nC @ 10V
    24ns
    10V
    ±20V
    27 ns
    25 ns
    24A
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    -
    -
    -
    NTD20N03L27T4G vs NTD24N06-001
  • NTD20P06L-1G
    NTD20P06L-1G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    4
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Tin (Sn)
    -
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    -
    -
    -15.5A
    -
    4
    R-PSIP-T3
    1
    65W Tc
    Single
    ENHANCEMENT MODE
    65W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    150m Ω @ 7.5A, 5V
    2V @ 250μA
    1190pF @ 25V
    15.5A Ta
    26nC @ 5V
    90ns
    5V
    ±20V
    70 ns
    28 ns
    15.5A
    -
    20V
    -60V
    50A
    -
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    -
    60V
    15A
    0.15Ohm
    NTD20N03L27T4G vs NTD20P06L-1G
  • NTD20N03L27-001
    NTD20N03L27-001
    ON Semiconductor
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    2003
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    30V
    MOSFET (Metal Oxide)
    -
    -
    20A
    -
    -
    -
    -
    1.75W Ta 74W Tc
    Single
    -
    74W
    -
    -
    N-Channel
    -
    27m Ω @ 10A, 5V
    2V @ 250μA
    1260pF @ 25V
    20A Ta
    18.9nC @ 10V
    137ns
    4V 5V
    ±20V
    31 ns
    38 ns
    20A
    -
    20V
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    -
    -
    -
    NTD20N03L27T4G vs NTD20N03L27-001
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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