ON Semiconductor NSBC124EPDXV6T5G
- Part Number:
- NSBC124EPDXV6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844888-NSBC124EPDXV6T5G
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- ECAD Model:
-
- Datasheet:
- NSBC124EPDXV6T5G
ON Semiconductor NSBC124EPDXV6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC124EPDXV6T5G.
- Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
- Factory Lead Time17 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBC1*
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min60
- Resistor - Base (R1)22k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)22k Ω
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC124EPDXV6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC124EPDXV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC124EPDXV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC124EPDXV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC124EPDXV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC124EPDXV6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 22K/22Kohm, Sot-963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC124EPDXV6T5G
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 22K/22Kohm, Sot-963; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC124EPDXV6T5G
The three parts on the right have similar specifications to NSBC124EPDXV6T5G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeTransistor Element MaterialReach Compliance CodeJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Radiation HardeningView Compare
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NSBC124EPDXV6T5GACTIVE (Last Updated: 2 weeks ago)17 WeeksSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTANCE RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*6Not Qualified2NPN, PNPDual357mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA60 @ 5mA 10V500nA250mV @ 300μA, 10mA50V6022k Ω100mA22k ΩROHS3 CompliantLead Free---------- -
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO 2.14---FLAT260-40-6COMMERCIAL2---SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA--22k Ω-47k ΩROHS3 Compliant-SILICONunknownR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN50V100mA-
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ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signal-339mWFLATNOT SPECIFIED-NOT SPECIFIEDNSBC1*6Not Qualified2NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V1602.2k Ω--ROHS3 CompliantLead Free---------
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ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO 0.047BIP General Purpose Small Signal-339mWFLAT---NSBC1*6-2NPN, PNPDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V802.2k Ω-47k ΩROHS3 CompliantLead Free--------No
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