ON Semiconductor NSBC123TPDP6T5G
- Part Number:
- NSBC123TPDP6T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844606-NSBC123TPDP6T5G
- Description:
- TRANS PREBIAS NPN 254MW SOT963
- ECAD Model:
-
- Datasheet:
- NSBC123TPDP6T5G
ON Semiconductor NSBC123TPDP6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC123TPDP6T5G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-963
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation339mW
- Terminal FormFLAT
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation231mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min160
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current100mA
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC123TPDP6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123TPDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123TPDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123TPDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123TPDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC123TPDP6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-963 T/R
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 2.2Kohm, Sot-963-6; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC123TPDP6T5G
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-963 T/R
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 2.2Kohm, Sot-963-6; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi NSBC123TPDP6T5G
The three parts on the right have similar specifications to NSBC123TPDP6T5G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryMax Power DissipationTerminal FormPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentREACH SVHCRadiation HardeningRoHS StatusLead FreeBase Part NumberTransistor Element MaterialPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Emitter Base (R2)View Compare
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NSBC123TPDP6T5GACTIVE (Last Updated: 1 week ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIOBIP General Purpose Small Signal339mWFLAT62NPN, PNPDual231mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V1602.2k Ω100mANo SVHCNoROHS3 CompliantLead Free-------------- -
ACTIVE (Last Updated: 5 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signals339mWFLAT62NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 5mA, 10mA50V160100k Ω--NoROHS3 CompliantLead FreeNSBC1*------------
-
--Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO 2.14--FLAT62---SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA--22k Ω---ROHS3 Compliant--SILICON260unknown40R-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN50V100mA47k Ω
-
ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSOT-963YES6Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO 0.047BIP General Purpose Small Signal339mWFLAT62NPN, PNPDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V802.2k Ω--NoROHS3 CompliantLead FreeNSBC1*-----------47k Ω
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