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NSBC123JPDP6T5G

ON Semiconductor NSBC123JPDP6T5G

Part Number:
NSBC123JPDP6T5G
Manufacturer:
ON Semiconductor
Ventron No:
2844616-NSBC123JPDP6T5G
Description:
TRANS 2NPN PREBIAS 0.339W SOT963
ECAD Model:
Datasheet:
NSBC123JPDP6T5G

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Specifications
ON Semiconductor NSBC123JPDP6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC123JPDP6T5G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-963
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO 0.047
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    339mW
  • Terminal Form
    FLAT
  • Base Part Number
    NSBC1*
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    2.2k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSBC123JPDP6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123JPDP6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123JPDP6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC123JPDP6T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 47K/22Kohm, Sot-563, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC123JPDP6T5G
Product Comparison
The three parts on the right have similar specifications to NSBC123JPDP6T5G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Max Breakdown Voltage
    Continuous Collector Current
    Height
    Length
    Width
    Transistor Element Material
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • NSBC123JPDP6T5G
    NSBC123JPDP6T5G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Surface Mount
    SOT-963
    YES
    6
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO 0.047
    BIP General Purpose Small Signal
    339mW
    FLAT
    NSBC1*
    6
    2
    NPN, PNP
    Dual
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    80
    2.2k Ω
    47k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSBC113EDXV6T1G
    NSBC113EDXV6T1G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    2 Weeks
    Surface Mount
    SOT-563, SOT-666
    YES
    6
    Tape & Reel (TR)
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    500mW
    FLAT
    NSBC1*
    6
    2
    NPN
    Dual
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    250mV
    100mA
    3 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    3
    1k Ω
    1k Ω
    -
    RoHS Compliant
    Lead Free
    8.193012mg
    50V
    NOT SPECIFIED
    100mA
    NOT SPECIFIED
    Not Qualified
    50V
    100mA
    550μm
    1.6mm
    1.2mm
    -
    -
    -
    -
    -
    -
    -
    -
    NSBC123JPDP6T5G vs NSBC113EDXV6T1G
  • NSBC115TDP6T5G
    NSBC115TDP6T5G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    8 Weeks
    Surface Mount
    SOT-963
    YES
    6
    Tape & Reel (TR)
    2010
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR
    BIP General Purpose Small Signals
    339mW
    FLAT
    NSBC1*
    6
    2
    NPN
    Dual
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    160
    100k Ω
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NSBC123JPDP6T5G vs NSBC115TDP6T5G
  • NSBC124XDXV6T1
    NSBC124XDXV6T1
    ON Semiconductor
    -
    -
    Surface Mount
    SOT-563, SOT-666
    YES
    -
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    MATTE TIN
    -
    -
    BUILT IN BIAS RESISTOR RATIO 2.14
    -
    -
    FLAT
    -
    6
    2
    -
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    -
    -
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    -
    -
    22k Ω
    47k Ω
    -
    ROHS3 Compliant
    -
    -
    -
    260
    -
    40
    COMMERCIAL
    -
    -
    -
    -
    -
    SILICON
    unknown
    R-PDSO-F6
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    500mW
    NPN
    50V
    100mA
    NSBC123JPDP6T5G vs NSBC124XDXV6T1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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