ON Semiconductor NSBC113EDXV6T1G
- Part Number:
- NSBC113EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844712-NSBC113EDXV6T1G
- Description:
- TRANS 2NPN PREBIAS 0.5W SOT563
- ECAD Model:
-
- Datasheet:
- NSBC113EDXV6T1G
ON Semiconductor NSBC113EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC113EDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- Weight8.193012mg
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberNSBC1*
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min3
- Resistor - Base (R1)1k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)1k Ω
- Height550μm
- Length1.6mm
- Width1.2mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NSBC113EDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC113EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC113EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC113EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC113EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC113EDXV6T1G More Descriptions
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
50V Dual NPN Bipolar Digital Transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC113EDXV6T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
50V Dual NPN Bipolar Digital Transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC113EDXV6T1G
The three parts on the right have similar specifications to NSBC113EDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRoHS StatusLead FreeMountTransistor Element MaterialReach Compliance CodeJESD-30 CodeConfigurationPolarity/Channel TypePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBC113EDXV6T1GACTIVE (Last Updated: 3 days ago)2 WeeksSurface MountSOT-563, SOT-666YES68.193012mgTape & Reel (TR)2005e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLATNOT SPECIFIED100mANOT SPECIFIEDNSBC1*6Not Qualified2NPNDualSWITCHING2 NPN - Pre-Biased (Dual)250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V50V31k Ω100mA1k Ω550μm1.6mm1.2mmRoHS CompliantLead Free---------- -
--Surface MountSOT-563, SOT-666---Tape & Reel (TR)2005e3-Obsolete1 (Unlimited)6EAR99Tin (Sn)--BUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*6Not Qualified2--SWITCHING2 NPN - Pre-Biased (Dual)250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V--1k Ω-1k Ω---Non-RoHS CompliantContains LeadSurface MountSILICONunknownR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN---
-
--Surface MountSOT-563, SOT-666YES--Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN--BUILT IN BIAS RESISTOR RATIO 2.14---FLAT260-40-6COMMERCIAL2--SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA---22k Ω-47k Ω---ROHS3 Compliant--SILICONunknownR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN500mW50V100mA
-
ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSOT-963YES6-Tape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signal-339mWFLATNOT SPECIFIED-NOT SPECIFIEDNSBC1*6Not Qualified2NPNDualSWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-1602.2k Ω-----ROHS3 CompliantLead Free---------
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