ON Semiconductor NSBC123JPDXV6T1
- Part Number:
- NSBC123JPDXV6T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844693-NSBC123JPDXV6T1
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- ECAD Model:
-
- Datasheet:
- NSBC114EPDXV6T1,5 Series
ON Semiconductor NSBC123JPDXV6T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC123JPDXV6T1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBC1*
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NSBC123JPDXV6T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123JPDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123JPDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123JPDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123JPDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC123JPDXV6T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
TRANS PREBIAS NPN/PNP SOT563
OEMs, CMs ONLY (NO BROKERS)
TRANS PREBIAS NPN/PNP SOT563
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to NSBC123JPDXV6T1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusLead FreeLifecycle StatusFactory Lead TimeSurface MountPbfree CodeAdditional FeatureRadiation HardeningTransistor Element MaterialJESD-30 CodeConfigurationPolarity/Channel TypePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBC123JPDXV6T1Surface MountSurface MountSOT-563, SOT-6666Tape & Reel (TR)2008e3Obsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal50V500mWFLAT260unknown100mA40NSBC1*6Not Qualified2PNPDual357mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V802.2k Ω100mA47k ΩNon-RoHS CompliantContains Lead-------------- -
-Surface MountSOT-9636Tape & Reel (TR)2010e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signals-339mWFLAT----NSBC1*6-2NPNDual-SWITCHING2 NPN - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 5mA, 10mA50V-160100k Ω--ROHS3 CompliantLead FreeACTIVE (Last Updated: 5 days ago)8 WeeksYESyesBUILT IN BIAS RESISTORNo-------
-
Surface MountSurface MountSOT-563, SOT-666-Tape & Reel (TR)2005e3Obsolete1 (Unlimited)6EAR99Tin (Sn)--BIP General Purpose Small Signal50V500mWFLAT260unknown100mA40NSBC1*6Not Qualified2---SWITCHING2 NPN - Pre-Biased (Dual)250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V--1k Ω-1k ΩNon-RoHS CompliantContains Lead----BUILT IN BIAS RESISTOR RATIO IS 1-SILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN---
-
-Surface MountSOT-563, SOT-666-Tape & Reel (TR)-e3Obsolete1 (Unlimited)6-MATTE TIN-----FLAT260unknown-40-6COMMERCIAL2---SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA---22k Ω-47k ΩROHS3 Compliant---YESyesBUILT IN BIAS RESISTOR RATIO 2.14-SILICONR-PDSO-F6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN500mW50V100mA
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