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UMH11NTN

Rohm Semiconductor UMH11NTN

Part Number:
UMH11NTN
Manufacturer:
Rohm Semiconductor
Ventron No:
3813341-UMH11NTN
Description:
TRANS 2NPN PREBIAS 0.15W UMT6
ECAD Model:
Datasheet:
UMH11NTN

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Specifications
Rohm Semiconductor UMH11NTN technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMH11NTN.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Copper (Sn/Cu)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • HTS Code
    8541.21.00.75
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    150mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    50mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MH11
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • hFE Min
    30
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    10k Ω
  • VCEsat-Max
    0.3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
UMH11NTN Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet UMH11NTN or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMH11NTN. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMH11NTN More Descriptions
Trans Digital BJT NPN 50V 100mA 150mW 6-Pin UMT T/R
UMH11N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88
30@5mA,5V 2 NPN - Pre-Biased 150mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Digital Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:-; No. Of Pins:6 Pin Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to UMH11NTN.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Max Output Current
    Operating Supply Voltage
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Frequency - Transition
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    VCEsat-Max
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    DC Current Gain-Min (hFE)
    Surface Mount
    Transistor Element Material
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    View Compare
  • UMH11NTN
    UMH11NTN
    Rohm Semiconductor
    13 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2004
    e2
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin/Copper (Sn/Cu)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    8541.21.00.75
    BIP General Purpose Small Signal
    50V
    150mW
    GULL WING
    260
    50mA
    10
    *MH11
    6
    100mA
    50V
    2
    NPN
    Dual
    150mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    300mV
    100mA
    30 @ 5mA 5V
    500nA
    300mV @ 500μA, 10mA
    50V
    250MHz
    50V
    250MHz
    30
    10k Ω
    100mA
    10k Ω
    0.3 V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • UMH1NTN
    UMH1NTN
    Rohm Semiconductor
    10 Weeks
    Surface Mount
    -
    SOT-363
    6
    Tape & Reel (TR)
    2004
    e2
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin/Copper (Sn/Cu)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO 1
    8541.21.00.75
    BIP General Purpose Small Signal
    50V
    150mW
    GULL WING
    260
    30mA
    10
    -
    6
    -
    -
    2
    NPN
    Dual
    150mW
    SWITCHING
    -
    300mV
    100mA
    -
    -
    -
    50V
    250MHz
    50V
    -
    56
    -
    100mA
    -
    0.3 V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    56
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    UMH11NTN vs UMH1NTN
  • UMH1N-TP
    UMH1N-TP
    Micro Commercial Co
    12 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    Cut Tape (CT)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    -
    -
    BUILT-IN BIAS RESISTOR RATIO IS 1
    -
    BIP General Purpose Small Signal
    -
    -
    GULL WING
    260
    -
    10
    UMH1N
    6
    -
    -
    2
    -
    -
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    -
    -
    56 @ 5mA 5V
    500nA
    300mV @ 500μA, 10mA
    -
    250MHz
    -
    250MHz
    -
    22k Ω
    -
    22k Ω
    -
    -
    -
    ROHS3 Compliant
    -
    -
    YES
    SILICON
    R-PDSO-G6
    Not Qualified
    150°C
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    150mW
    NPN
    50V
    100mA
    0.15W
    UMH11NTN vs UMH1N-TP
  • UMH10NTN
    UMH10NTN
    Rohm Semiconductor
    13 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2011
    e2
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin/Copper (Sn/Cu)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO 21
    8541.21.00.75
    BIP General Purpose Small Signal
    50V
    150mW
    GULL WING
    260
    100mA
    10
    *MH10
    6
    100mA
    50V
    2
    NPN
    Dual
    150mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    300mV
    100mA
    80 @ 10mA 5V
    500nA
    300mV @ 250μA, 5mA
    50V
    250MHz
    50V
    250MHz
    80
    2.2k Ω
    100mA
    47k Ω
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    UMH11NTN vs UMH10NTN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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