NSVMUN5211DW1T3G

ON Semiconductor NSVMUN5211DW1T3G

Part Number:
NSVMUN5211DW1T3G
Manufacturer:
ON Semiconductor
Ventron No:
3813385-NSVMUN5211DW1T3G
Description:
TRANS 2NPN PREBIAS 50V SOT363
ECAD Model:
Datasheet:
NSVMUN5211DW1T3G

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Specifications
ON Semiconductor NSVMUN5211DW1T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMUN5211DW1T3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    250mW
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    2
  • Power - Max
    250mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    10k Ω
  • Resistor - Emitter Base (R2)
    10k Ω
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSVMUN5211DW1T3G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVMUN5211DW1T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVMUN5211DW1T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSVMUN5211DW1T3G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
Dual NPN Bipolar Digital Transistor (BRT)
NSVMUN5211DW1 Series 50 V 100 mA Dual NPN Bias Resistor Transistor - SOT-363
TRANS, AEC-Q101, DUAL NPN, 50V, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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