NSBC124EDXV6T1

ON Semiconductor NSBC124EDXV6T1

Part Number:
NSBC124EDXV6T1
Manufacturer:
ON Semiconductor
Ventron No:
3584914-NSBC124EDXV6T1
Description:
TRANS 2NPN PREBIAS 0.5W SOT563
ECAD Model:
Datasheet:
NSBC114EDXV6Tx

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Specifications
ON Semiconductor NSBC124EDXV6T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC124EDXV6T1.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    500mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    NSBC1*
  • Pin Count
    6
  • JESD-30 Code
    R-PDSO-F6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    357mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • hFE Min
    60
  • Resistor - Base (R1)
    22k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    22k Ω
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
NSBC124EDXV6T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC124EDXV6T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC124EDXV6T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC124EDXV6T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
TRANS 2NPN PREBIAS 0.5W SOT563
Product Comparison
The three parts on the right have similar specifications to NSBC124EDXV6T1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Pbfree Code
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Lifecycle Status
    Factory Lead Time
    Number of Pins
    Radiation Hardening
    View Compare
  • NSBC124EDXV6T1
    NSBC124EDXV6T1
    Surface Mount
    Surface Mount
    SOT-563, SOT-666
    Tape & Reel (TR)
    2006
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    500mW
    FLAT
    260
    unknown
    100mA
    40
    NSBC1*
    6
    R-PDSO-F6
    Not Qualified
    2
    NPN
    Dual
    357mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    250mV
    100mA
    60 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    50V
    60
    22k Ω
    100mA
    22k Ω
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSBC114YPDXV6T1
    -
    Surface Mount
    SOT-563, SOT-666
    Tape & Reel (TR)
    -
    e3
    Obsolete
    1 (Unlimited)
    6
    -
    MATTE TIN
    -
    -
    BUILT IN BIAS RESISTOR RATIO IS 4.7
    -
    -
    -
    FLAT
    260
    unknown
    -
    40
    -
    6
    R-PDSO-F6
    COMMERCIAL
    2
    -
    -
    -
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    -
    -
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    -
    -
    -
    10k Ω
    -
    47k Ω
    ROHS3 Compliant
    -
    YES
    SILICON
    yes
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    500mW
    NPN AND PNP
    50V
    100mA
    -
    -
    -
    -
  • NSBC123TDP6T5G
    -
    Surface Mount
    SOT-963
    Tape & Reel (TR)
    2010
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR
    BIP General Purpose Small Signal
    -
    339mW
    FLAT
    NOT SPECIFIED
    -
    -
    NOT SPECIFIED
    NSBC1*
    6
    -
    Not Qualified
    2
    NPN
    Dual
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    160
    2.2k Ω
    -
    -
    ROHS3 Compliant
    Lead Free
    YES
    -
    yes
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    6
    -
  • NSBC123JPDP6T5G
    -
    Surface Mount
    SOT-963
    Tape & Reel (TR)
    2008
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO 0.047
    BIP General Purpose Small Signal
    -
    339mW
    FLAT
    -
    -
    -
    -
    NSBC1*
    6
    -
    -
    2
    NPN, PNP
    Dual
    -
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    -
    80
    2.2k Ω
    -
    47k Ω
    ROHS3 Compliant
    Lead Free
    YES
    -
    yes
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    6
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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