NP88N075KUE-E1-AY

Renesas Electronics America NP88N075KUE-E1-AY

Part Number:
NP88N075KUE-E1-AY
Manufacturer:
Renesas Electronics America
Ventron No:
3586842-NP88N075KUE-E1-AY
Description:
MOSFET N-CH 75V 88A TO-263
ECAD Model:
Datasheet:
NP88N075KUE-E1-AY

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Specifications
Renesas Electronics America NP88N075KUE-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NP88N075KUE-E1-AY.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.8W Ta 288W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 44A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    12300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    88A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    230nC @ 10V
  • Drain to Source Voltage (Vdss)
    75V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    88A
  • Drain-source On Resistance-Max
    0.0085Ohm
  • Pulsed Drain Current-Max (IDM)
    352A
  • DS Breakdown Voltage-Min
    75V
  • Avalanche Energy Rating (Eas)
    450 mJ
  • RoHS Status
    ROHS3 Compliant
Description
NP88N075KUE-E1-AY Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12300pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 88A.There is a peak drain current of 352A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

NP88N075KUE-E1-AY Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 352A.
a 75V drain to source voltage (Vdss)


NP88N075KUE-E1-AY Applications
There are a lot of Renesas Electronics America
NP88N075KUE-E1-AY applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NP88N075KUE-E1-AY More Descriptions
Trans MOSFET N-CH 75V 88A 3-Pin(2 Tab) TO-263 T/R
MOSFET POWER MOSFET TRANSISTOR
Power MOSFETs for Automotive
Product Comparison
The three parts on the right have similar specifications to NP88N075KUE-E1-AY.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Radiation Hardening
    Lead Free
    View Compare
  • NP88N075KUE-E1-AY
    NP88N075KUE-E1-AY
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    175°C TJ
    Tape & Reel (TR)
    2007
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    8541.29.00.95
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1.8W Ta 288W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    8.5m Ω @ 44A, 10V
    4V @ 250μA
    12300pF @ 25V
    88A Tc
    230nC @ 10V
    75V
    10V
    ±20V
    88A
    0.0085Ohm
    352A
    75V
    450 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NP88N055KUG-E1-AY
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    175°C TJ
    Tape & Reel (TR)
    2013
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3
    -
    -
    1
    Single
    1.8W Ta 200W Tc
    -
    -
    N-Channel
    -
    3.9m Ω @ 44A, 10V
    4V @ 250μA
    14400pF @ 25V
    88A Tc
    250nC @ 10V
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    1.8W
    39 ns
    34ns
    15 ns
    120 ns
    88A
    20V
    No
    Lead Free
  • NP88N04NUG-S18-AY
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    175°C TJ
    Tube
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    -
    -
    -
    1.8W Ta 200W Tc
    -
    -
    N-Channel
    -
    3.4m Ω @ 44A, 10V
    4V @ 250μA
    15000pF @ 25V
    88A Tc
    250nC @ 10V
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    -
    -
    -
    -
    -
    88A
    -
    -
    -
  • NP88N03KDG-E1-AY
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    175°C TJ
    Tape & Reel (TR)
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3
    -
    -
    1
    Single
    1.8W Ta 200W Tc
    -
    -
    N-Channel
    -
    2.4m Ω @ 44A, 10V
    2.5V @ 250μA
    13500pF @ 25V
    88A Tc
    250nC @ 10V
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    1.8W
    35 ns
    1.1μs
    23 ns
    125 ns
    88A
    20V
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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