Renesas Electronics America NP88N075KUE-E1-AY
- Part Number:
- NP88N075KUE-E1-AY
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 3586842-NP88N075KUE-E1-AY
- Description:
- MOSFET N-CH 75V 88A TO-263
- Datasheet:
- NP88N075KUE-E1-AY
Renesas Electronics America NP88N075KUE-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NP88N075KUE-E1-AY.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.8W Ta 288W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5m Ω @ 44A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds12300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C88A Tc
- Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
- Drain to Source Voltage (Vdss)75V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)88A
- Drain-source On Resistance-Max0.0085Ohm
- Pulsed Drain Current-Max (IDM)352A
- DS Breakdown Voltage-Min75V
- Avalanche Energy Rating (Eas)450 mJ
- RoHS StatusROHS3 Compliant
NP88N075KUE-E1-AY Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12300pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 88A.There is a peak drain current of 352A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP88N075KUE-E1-AY Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 352A.
a 75V drain to source voltage (Vdss)
NP88N075KUE-E1-AY Applications
There are a lot of Renesas Electronics America
NP88N075KUE-E1-AY applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12300pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 88A.There is a peak drain current of 352A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP88N075KUE-E1-AY Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 352A.
a 75V drain to source voltage (Vdss)
NP88N075KUE-E1-AY Applications
There are a lot of Renesas Electronics America
NP88N075KUE-E1-AY applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NP88N075KUE-E1-AY More Descriptions
Trans MOSFET N-CH 75V 88A 3-Pin(2 Tab) TO-263 T/R
MOSFET POWER MOSFET TRANSISTOR
Power MOSFETs for Automotive
MOSFET POWER MOSFET TRANSISTOR
Power MOSFETs for Automotive
The three parts on the right have similar specifications to NP88N075KUE-E1-AY.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Radiation HardeningLead FreeView Compare
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NP88N075KUE-E1-AYSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON175°C TJTape & Reel (TR)2007e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn)8541.29.00.95FET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE1.8W Ta 288W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8.5m Ω @ 44A, 10V4V @ 250μA12300pF @ 25V88A Tc230nC @ 10V75V10V±20V88A0.0085Ohm352A75V450 mJROHS3 Compliant-----------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--175°C TJTape & Reel (TR)2013-Obsolete1 (Unlimited)-EAR99--FET General Purpose PowerMOSFET (Metal Oxide)----3--1Single1.8W Ta 200W Tc--N-Channel-3.9m Ω @ 44A, 10V4V @ 250μA14400pF @ 25V88A Tc250nC @ 10V55V10V±20V-----ROHS3 CompliantSurface Mount1.8W39 ns34ns15 ns120 ns88A20VNoLead Free
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--175°C TJTube2005-Obsolete1 (Unlimited)-EAR99---MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED3----1.8W Ta 200W Tc--N-Channel-3.4m Ω @ 44A, 10V4V @ 250μA15000pF @ 25V88A Tc250nC @ 10V40V10V±20V-----ROHS3 CompliantThrough Hole-----88A---
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--175°C TJTape & Reel (TR)2005-Obsolete1 (Unlimited)-EAR99--FET General Purpose PowerMOSFET (Metal Oxide)----3--1Single1.8W Ta 200W Tc--N-Channel-2.4m Ω @ 44A, 10V2.5V @ 250μA13500pF @ 25V88A Tc250nC @ 10V30V4.5V 10V±20V-----ROHS3 CompliantSurface Mount1.8W35 ns1.1μs23 ns125 ns88A20VNoLead Free
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