Renesas Electronics America NP80N04PUG-E1B-AY

NP80N04PUG-E1B-AY Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7350pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 32 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

NP80N04PUG-E1B-AY Features
a continuous drain current (ID) of 80A
the turn-off delay time is 65 ns
a 40V drain to source voltage (Vdss)


NP80N04PUG-E1B-AY Applications
There are a lot of Renesas Electronics America
NP80N04PUG-E1B-AY applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching