ON Semiconductor NGTB45N60S1WG
- Part Number:
- NGTB45N60S1WG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3587314-NGTB45N60S1WG
- Description:
- IGBT 45A 600V TO-247
- ECAD Model:
-
- Datasheet:
- NGTB45N60S1WG
ON Semiconductor NGTB45N60S1WG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGTB45N60S1WG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation300W
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max300W
- Collector Emitter Voltage (VCEO)2.4V
- Max Collector Current90A
- Reverse Recovery Time70 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
- Test Condition400V, 45A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 45A
- IGBT TypeTrench
- Gate Charge125nC
- Current - Collector Pulsed (Icm)180A
- Td (on/off) @ 25°C72ns/132ns
- Switching Energy1.25mJ (on), 530μJ (off)
- Height21.4mm
- Length16.25mm
- Width5.3mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NGTB45N60S1WG Description
NGTB45N60S1WG is a member of Insulated Gate Bipolar Transistors (IGBTs) provided by ON Semiconductor. It is able to provide low on-state voltage and minimal switching loss in demanding switching applications based on its robust and cost-effective Trench construction. Its low switching loss achieves low system power dissipation. The NGTB45N60S1WG IGBT is ideally suitable for welding applications.
NGTB45N60S1WG Features
Soft fast reverse recovery diode Package: TO-247 Optimized for high-speed switching 5 s short?circuit capability Robust and cost-effective Trench construction
NGTB45N60S1WG Applications
Welding
NGTB45N60S1WG is a member of Insulated Gate Bipolar Transistors (IGBTs) provided by ON Semiconductor. It is able to provide low on-state voltage and minimal switching loss in demanding switching applications based on its robust and cost-effective Trench construction. Its low switching loss achieves low system power dissipation. The NGTB45N60S1WG IGBT is ideally suitable for welding applications.
NGTB45N60S1WG Features
Soft fast reverse recovery diode Package: TO-247 Optimized for high-speed switching 5 s short?circuit capability Robust and cost-effective Trench construction
NGTB45N60S1WG Applications
Welding
NGTB45N60S1WG More Descriptions
Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3 Tab) TO-247 Tube
ON SEMICONDUCTOR NGTB45N60S1WG IGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 Pins
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD
IGBT, SINGLE, 600V, 90A, TO-247-3;
ON SEMICONDUCTOR NGTB45N60S1WG IGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 Pins
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD
IGBT, SINGLE, 600V, 90A, TO-247-3;
The three parts on the right have similar specifications to NGTB45N60S1WG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Power DissipationElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthREACH SVHCRoHS StatusLead FreeWeightPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountVoltage - Collector Emitter Breakdown (Max)Surface MountSubcategoryHalogen FreePolarity/Channel TypeGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxView Compare
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NGTB45N60S1WGLAST SHIPMENTS (Last Updated: 4 days ago)28 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2014e3yesObsolete1 (Unlimited)EAR99Tin (Sn)300WSingleStandard300W2.4V90A70 ns600V2V400V, 45A, 10 Ω, 15V2.4V @ 15V, 45ATrench125nC180A72ns/132ns1.25mJ (on), 530μJ (off)21.4mm16.25mm5.3mmNo SVHCRoHS CompliantLead Free------------ -
ACTIVE (Last Updated: 6 days ago)11 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2006e3yesActive1 (Unlimited)EAR99Tin (Sn)452WSingleStandard452W1.2kV60A240 ns1.2kV2V600V, 30A, 10 Ω, 15V2.3V @ 15V, 30ATrench Field Stop220nC120A98ns/210ns2.6mJ (on), 700μJ (off)21.4mm16.25mm5.3mmNo SVHCROHS3 CompliantLead Free6.500007gNOT SPECIFIEDNOT SPECIFIED31200V------
-
LAST SHIPMENTS (Last Updated: 2 days ago)5 Weeks-Through HoleTO-247-33-55°C~150°C TJTube2013e3yesObsolete1 (Unlimited)EAR99Tin (Sn)257WSingleStandard257W600V80A77 ns600V1.85V400V, 40A, 10 Ω, 15V2.1V @ 15V, 40ATrench Field Stop171nC160A85ns/174ns890μJ (on), 440μJ (off)21.4mm16.25mm5.3mmNo SVHCRoHS CompliantLead Free6.500007g--3-NOInsulated Gate BIP TransistorsHalogen FreeN-CHANNEL20V6.5V
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LAST SHIPMENTS (Last Updated: 2 days ago)4 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2011e3yesObsolete1 (Unlimited)-Tin (Sn)366WSingleStandard366W600V80A72 ns600V1.85V400V, 40A, 10 Ω, 15V2V @ 15V, 40ATrench Field Stop170nC160A84ns/177ns970μJ (on), 440μJ (off)21.08mm16.26mm5.3mmNo SVHCRoHS CompliantLead Free38.000013g-----Insulated Gate BIP Transistors-N-CHANNEL20V6.5V
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