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NGTB40N120S3WG

ON Semiconductor NGTB40N120S3WG

Part Number:
NGTB40N120S3WG
Manufacturer:
ON Semiconductor
Ventron No:
3554826-NGTB40N120S3WG
Description:
IGBT 1.2KV 40A TO247-3
ECAD Model:
Datasheet:
NGTB40N120S3WG

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Specifications
ON Semiconductor NGTB40N120S3WG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGTB40N120S3WG.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Pbfree Code
    yes
  • Part Status
    Active
  • Input Type
    Standard
  • Power - Max
    454W
  • Reverse Recovery Time
    163ns
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Current - Collector (Ic) (Max)
    160A
  • Test Condition
    600V, 40A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 40A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    212nC
  • Td (on/off) @ 25°C
    12ns/145ns
  • Switching Energy
    2.2mJ (on), 1.1mJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
NGTB40N120S3WG Description
This NGTB40N120S3WG Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Ultra Field Stop Trench structure that delivers outstanding performance in demanding switching applications while minimizing switching losses. The IGBT is ideal for applications that demand a rapid switching IGBT with low VF diodes, such as phase shifted full bridges. A free-wheeling diode with a low forward voltage is included in the device.
NGTB40N120S3WG Features
? Field Stop Technology for Extremely Efficient Trenching ? TJmax = 175°C ? Reverse Diode with Low VF ? High-speed switching optimized ? These devices are free of lead.
NGTB40N120S3WG Applications
? Welding ? UPS (Uninterruptible Power Supply) (UPS) ? Motor Management
NGTB40N120S3WG More Descriptions
Trans IGBT Chip N-CH 1200V 160A 454000mW 3-Pin(3 Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, TO-247
IGBT, SINGLE, 1.2KV, 160A, TO-247
IGBT, SINGLE, 1.2KV, 160A, TO-247; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to NGTB40N120S3WG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Input Type
    Power - Max
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Mount
    Number of Pins
    JESD-609 Code
    Moisture Sensitivity Level (MSL)
    Terminal Finish
    Max Power Dissipation
    Reach Compliance Code
    Element Configuration
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Current - Collector Pulsed (Icm)
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    Surface Mount
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Polarity/Channel Type
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Supplier Device Package
    View Compare
  • NGTB40N120S3WG
    NGTB40N120S3WG
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    2016
    yes
    Active
    Standard
    454W
    163ns
    1200V
    160A
    600V, 40A, 10 Ω, 15V
    1.95V @ 15V, 40A
    Trench Field Stop
    212nC
    12ns/145ns
    2.2mJ (on), 1.1mJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NGTB10N60R2DT4G
    NGTB10N60R2DT4G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    4 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    175°C TJ
    Tape & Reel (TR)
    2017
    yes
    Active
    Standard
    72W
    90 ns
    -
    -
    300V, 10A, 30 Ω, 15V
    2.1V @ 15V, 10A
    -
    53nC
    48ns/120ns
    412μJ (on), 140μJ (off)
    ROHS3 Compliant
    Surface Mount
    3
    e3
    1 (Unlimited)
    Tin (Sn)
    72W
    not_compliant
    Single
    600V
    20A
    600V
    1.7V
    600V
    40A
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NGTB40N120S3WG vs NGTB10N60R2DT4G
  • NGTB40N120FLWG
    NGTB40N120FLWG
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 4 days ago)
    -
    Through Hole
    TO-247-3
    -55°C~150°C TJ
    Tube
    2011
    yes
    Obsolete
    Standard
    -
    200ns
    1200V
    -
    600V, 40A, 10 Ω, 15V
    2.2V @ 15V, 40A
    Trench Field Stop
    415nC
    130ns/385ns
    2.6mJ (on), 1.6mJ (off)
    RoHS Compliant
    -
    3
    e3
    1 (Unlimited)
    Tin (Sn)
    260W
    -
    Single
    1.2kV
    80A
    1.2kV
    2V
    -
    160A
    21.08mm
    16.26mm
    5.3mm
    No SVHC
    Lead Free
    NO
    SILICON
    3
    EAR99
    Insulated Gate BIP Transistors
    NOT SPECIFIED
    NOT SPECIFIED
    3
    1
    260W
    COLLECTOR
    POWER CONTROL
    Halogen Free
    N-CHANNEL
    172 ns
    630 ns
    20V
    6.5V
    -
    NGTB40N120S3WG vs NGTB40N120FLWG
  • NGTB30N120LWG
    NGTB30N120LWG
    ON Semiconductor
    -
    -
    Through Hole
    TO-247-3
    -55°C~150°C TJ
    Tube
    -
    -
    Obsolete
    Standard
    560W
    -
    1.2V
    60A
    600V, 30A, 10Ohm, 15V
    2.2V @ 15V, 30A
    Trench Field Stop
    420nC
    136ns/360ns
    4.4mJ (on), 1mJ (off)
    ROHS3 Compliant
    -
    -
    -
    3 (168 Hours)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    240A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247
    NGTB40N120S3WG vs NGTB30N120LWG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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