ON Semiconductor NGB8206NT4
- Part Number:
- NGB8206NT4
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3554848-NGB8206NT4
- Description:
- IGBT 390V 20A 150W D2PAK
- Datasheet:
- NGB8206N_AN
ON Semiconductor NGB8206NT4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGB8206NT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin/Lead (Sn80Pb20)
- Additional FeatureVOLTAGE CLAMPING
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC350V
- Max Power Dissipation150W
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberNGB8206
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Rise Time-Max8000ns
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- Power Dissipation150W
- Case ConnectionCOLLECTOR
- Input TypeLogic
- Transistor ApplicationAUTOMOTIVE IGNITION
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.9V
- Max Collector Current20A
- Collector Emitter Breakdown Voltage390V
- Turn On Time6500 ns
- Test Condition300V, 9A, 1k Ω, 5V
- Vce(on) (Max) @ Vge, Ic1.9V @ 4.5V, 20A
- Turn Off Time-Nom (toff)18500 ns
- Current - Collector Pulsed (Icm)50A
- Td (on/off) @ 25°C-/5μs
- Gate-Emitter Voltage-Max15V
- Fall Time-Max (tf)14000ns
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NGB8206NT4 Description
The NGB8206NT4 is an Ignition IGBT featuring monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications.
NGB8206NT4 Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage
High Pulsed Current Capability
These are Pb?Free Devices
NGB8206NT4 Applications
Ignition Systems
The NGB8206NT4 is an Ignition IGBT featuring monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications.
NGB8206NT4 Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage
High Pulsed Current Capability
These are Pb?Free Devices
NGB8206NT4 Applications
Ignition Systems
NGB8206NT4 More Descriptions
N-Channel Ignition IGBT 20 A, 350 V
Insulated Gate Bipolar Transistor, 20A I(C), 390V V(BR)CES, N-Channel
Motor / Motion / Ignition Controllers & Drivers 20A 350V Ignition
IGBTs 20A, 350V, Ignition No-Cancel/No-Return
Insulated Gate Bipolar Transistor, 20A I(C), 390V V(BR)CES, N-Channel
Motor / Motion / Ignition Controllers & Drivers 20A 350V Ignition
IGBTs 20A, 350V, Ignition No-Cancel/No-Return
The three parts on the right have similar specifications to NGB8206NT4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsRise Time-MaxConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Current - Collector Pulsed (Icm)Td (on/off) @ 25°CGate-Emitter Voltage-MaxFall Time-Max (tf)RoHS StatusLead FreeFactory Lead TimeECCN CodePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountView Compare
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NGB8206NT4Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)2010e0noObsolete1 (Unlimited)2Tin/Lead (Sn80Pb20)VOLTAGE CLAMPINGInsulated Gate BIP Transistors350V150WSINGLEGULL WING240not_compliant20A30NGB82063R-PSSO-G2Not Qualified18000nsSINGLE WITH BUILT-IN DIODE AND RESISTOR150WCOLLECTORLogicAUTOMOTIVE IGNITIONN-CHANNEL1.9V20A390V6500 ns300V, 9A, 1k Ω, 5V1.9V @ 4.5V, 20A18500 ns50A-/5μs15V14000nsNon-RoHS CompliantContains Lead-------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)2012--Active2 (1 Year)--------NOT SPECIFIEDunknown-NOT SPECIFIEDNGB8206--------Logic------300V, 9A, 1k Ω, 5V1.9V @ 4.5V, 20A-50A-/5μs--ROHS3 Compliant-28 WeeksEAR99150W390V20A-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)2011--Active1 (Unlimited)--------NOT SPECIFIEDunknown-NOT SPECIFIEDNGB8207--------Logic-------2.6V @ 4V, 20A-50A---ROHS3 Compliant-30 WeeksEAR99165W365V20A-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-Tape & Reel (TR)---Obsolete1 (Unlimited)2-VOLTAGE CLAMPING---SINGLEGULL WINGNOT SPECIFIEDnot_compliant-NOT SPECIFIEDNGB8206-R-PSSO-G2Not Qualified1-SINGLE WITH BUILT-IN DIODE AND RESISTOR-COLLECTORLogicAUTOMOTIVE IGNITIONN-CHANNEL---6500 ns-1.9V @ 4.5V, 20A18500 ns----ROHS3 Compliant--EAR99150W390V20AYES
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