Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NDT2955
NDT2955

Fairchild/ON Semiconductor NDT2955

Part Number:
NDT2955
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585946-NDT2955
Description:
MOSFET P-CH 60V 2.5A SOT-223-4
ECAD Model:
Datasheet:
NDT2955

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Part Pictures
  • NDT2955 Detail Images
Specifications
Fairchild/ON Semiconductor NDT2955 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDT2955.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    250.2mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    300MOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -2.5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    300m Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    601pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    2.5A
  • Threshold Voltage
    2.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Dual Supply Voltage
    60V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -2.6 V
  • Height
    1.8mm
  • Length
    6.5mm
  • Width
    3.56mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NDT2955 Description
NDT2955 belongs to the family of P-channel enhancement-mode field-effect transistors (FETs) that are manufactured by ON Semiconductor based on the advanced high-voltage Trench process. It features a high-density cell design for extremely low RDS (on), as well as high power and current handling capability in a widely used surface-mount package. Due to its high quality and reliable performance, it is well suited for power management applications. More information can be found in the NDT2955 datasheet.

NDT2955 Features
Advanced high-voltage Trench process
High-density cell design 
Extremely low RDS (on)
High power and current handling capability
Available in the SOT-223 package

NDT2955 Applications
DC-DC converter
Power management
NDT2955 More Descriptions
Transistor MOSFET P-Channel 60V 2.5A 3W (Ta) Surface Mount SOT-223-4
Transistor: P-MOSFET; unipolar; -60V; -2.5A; 0.3ohm; 3W; -55 150 deg.C; SMD; SOT223
P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ
Single P-Channel 60 V 3 W 15 nC Silicon Surface Mount Mosfet - SOT-223
Trans MOSFET P-CH 60V 2.5A 4-Pin (3 Tab) SOT-223 T/R
This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.
MOSFET, P-CH, 60V, 2.5A, SOT-223, RL; Transistor Polarity: P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.095ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.5 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.1
MOSFET, P CH, 60V, 2.5A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:2.6V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:15A; SMD Marking:2955; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-2.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-4V
NDT2955 Detail Images
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for NDT2955
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.