Fairchild/ON Semiconductor NDT014L

Name: NDT014L
Brand: Fairchild/ON Semiconductor
SKU: 2480603-NDT014L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDT014L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2480603-NDT014L

Description:: MOSFET N-CH 60V 2.8A SOT-223

ECAD Model:

Datasheet:: NDT014L

Specifications

Fairchild/ON Semiconductor NDT014L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDT014L.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
160mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
2.8A
Number of Elements
1
Power Dissipation-Max
3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3W
Case Connection
DRAIN
Turn On Delay Time
6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
214pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.8A Ta
Gate Charge (Qg) (Max) @ Vgs
5nC @ 4.5V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
2.8A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2.7A
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Nominal Vgs
1.5 V
Height
1.7mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDT014L Description
This high cell density, DMOS-exclusive N-Channel logic level enhancement mode power field effect transistor is made by ON Semiconductor. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.

NDT014L Features
2.8 A, 60 V. RDS(ON) = 0.2 W @ VGS = 4.5 V
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.

NDT014L Applications
DC motor control
DC/DC conversion
Power Management
Consumer Electronics
Portable Devices
Industrial

NDT014L More Descriptions

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ
Trans MOSFET N-CH 60V 2.8A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223
N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to NDT014L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Drain to Source Voltage (Vdss)

Supplier Device Package

View Compare
NDT014L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

188mg

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

1998

e3

yes

Active

1 (Unlimited)

4

SMD/SMT

EAR99

160mOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

DUAL

GULL WING

2.8A

1

3W Ta

Single

ENHANCEMENT MODE

3W

DRAIN

6 ns

N-Channel

SWITCHING

160m Ω @ 3.4A, 10V

3V @ 250μA

214pF @ 30V

2.8A Ta

5nC @ 4.5V

14ns

4.5V 10V

±20V

10 ns

15 ns

2.8A

1.5V

20V

2.7A

60V

60V

1.5 V

1.7mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
NDT03N40ZT3G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 weeks ago)

13 Weeks

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

yes

Obsolete

1 (Unlimited)

-

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

2W Tc

-

-

-

-

-

N-Channel

-

3.4 Ω @ 600mA, 10V

4.5V @ 50μA

140pF @ 50V

500mA Tc

6.6nC @ 10V

-

10V

±30V

-

-

500mA

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

Tin (Sn)

400V

-

NDT014L vs NDT03N40ZT3G
NDT01N60T1G

ON Semiconductor

-

-

-

-

Surface Mount

TO-261-4, TO-261AA

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

2.5W Tc

-

-

-

-

-

N-Channel

-

8.5Ohm @ 200mA, 10V

3.7V @ 50μA

160pF @ 25V

400mA Tc

7.2nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

600V

SOT-223 (TO-261)

NDT014L vs NDT01N60T1G
NDT03N40ZT1G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 weeks ago)

8 Weeks

-

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

yes

Obsolete

1 (Unlimited)

-

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

2W Tc

-

-

-

-

-

N-Channel

-

3.4 Ω @ 600mA, 10V

4.5V @ 50μA

140pF @ 50V

500mA Tc

6.6nC @ 10V

-

10V

±30V

-

-

500mA

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

Tin (Sn)

400V

-

NDT014L vs NDT03N40ZT1G