NDS9430A

Fairchild/ON Semiconductor NDS9430A

Part Number:
NDS9430A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2489525-NDS9430A
Description:
MOSFET P-CH 20V 5.3A 8-SOIC
ECAD Model:
Datasheet:
NDS9430A

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Specifications
Fairchild/ON Semiconductor NDS9430A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9430A.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 5.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    950pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    5.3A
  • Drain-source On Resistance-Max
    0.05Ohm
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
NDS9430A Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 950pF @ 15V.5.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NDS9430A Features
a 20V drain to source voltage (Vdss)


NDS9430A Applications
There are a lot of Rochester Electronics, LLC
NDS9430A applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
NDS9430A More Descriptions
TRANS MOSFET P-CH 20V 5.3A 8SOIC
MOSFETs Single P-Ch FET Enhancement Mode
RES SMD 1.3K OHM 1% 1/8W 0805
MISCELLANEOUS MOSFETS;
RECOMMEND: FDS8433A
Product Comparison
The three parts on the right have similar specifications to NDS9430A.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    Additional Feature
    Series
    Reach Compliance Code
    View Compare
  • NDS9430A
    NDS9430A
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    50m Ω @ 5.3A, 10V
    3V @ 250μA
    950pF @ 15V
    5.3A Ta
    50nC @ 10V
    20V
    4.5V 10V
    ±20V
    5.3A
    0.05Ohm
    20V
    ROHS3 Compliant
    -
    -
    -
    -
  • NDS9410A
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    28m Ω @ 7.3A, 10V
    3V @ 250μA
    830pF @ 15V
    7.3A Ta
    22nC @ 10V
    30V
    4.5V 10V
    ±20V
    7.3A
    0.028Ohm
    30V
    ROHS3 Compliant
    LOGIC LEVEL COMPATIBLE
    -
    -
  • NDS9435A
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    50m Ω @ 5.3A, 10V
    3V @ 250μA
    528pF @ 15V
    5.3A Ta
    14nC @ 10V
    30V
    4.5V 10V
    ±25V
    5.3A
    0.05Ohm
    30V
    ROHS3 Compliant
    -
    PowerTrench®
    -
  • NDS9430
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    3V @ 250μA
    528pF @ 15V
    5.3A Ta
    14nC @ 10V
    30V
    4.5V 10V
    ±20V
    5.3A
    0.06Ohm
    30V
    ROHS3 Compliant
    -
    PowerTrench®
    unknown
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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