Fairchild/ON Semiconductor NDS9430A
- Part Number:
- NDS9430A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489525-NDS9430A
- Description:
- MOSFET P-CH 20V 5.3A 8-SOIC
- Datasheet:
- NDS9430A
Fairchild/ON Semiconductor NDS9430A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS9430A.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 5.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds950pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.3A Ta
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)5.3A
- Drain-source On Resistance-Max0.05Ohm
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
NDS9430A Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 950pF @ 15V.5.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NDS9430A Features
a 20V drain to source voltage (Vdss)
NDS9430A Applications
There are a lot of Rochester Electronics, LLC
NDS9430A applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 950pF @ 15V.5.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NDS9430A Features
a 20V drain to source voltage (Vdss)
NDS9430A Applications
There are a lot of Rochester Electronics, LLC
NDS9430A applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
NDS9430A More Descriptions
TRANS MOSFET P-CH 20V 5.3A 8SOIC
MOSFETs Single P-Ch FET Enhancement Mode
RES SMD 1.3K OHM 1% 1/8W 0805
MISCELLANEOUS MOSFETS;
RECOMMEND: FDS8433A
MOSFETs Single P-Ch FET Enhancement Mode
RES SMD 1.3K OHM 1% 1/8W 0805
MISCELLANEOUS MOSFETS;
RECOMMEND: FDS8433A
The three parts on the right have similar specifications to NDS9430A.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusAdditional FeatureSeriesReach Compliance CodeView Compare
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NDS9430ASurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEP-ChannelSWITCHING50m Ω @ 5.3A, 10V3V @ 250μA950pF @ 15V5.3A Ta50nC @ 10V20V4.5V 10V±20V5.3A0.05Ohm20VROHS3 Compliant----
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING28m Ω @ 7.3A, 10V3V @ 250μA830pF @ 15V7.3A Ta22nC @ 10V30V4.5V 10V±20V7.3A0.028Ohm30VROHS3 CompliantLOGIC LEVEL COMPATIBLE--
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEP-ChannelSWITCHING50m Ω @ 5.3A, 10V3V @ 250μA528pF @ 15V5.3A Ta14nC @ 10V30V4.5V 10V±25V5.3A0.05Ohm30VROHS3 Compliant-PowerTrench®-
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEP-ChannelSWITCHING60m Ω @ 5.3A, 10V3V @ 250μA528pF @ 15V5.3A Ta14nC @ 10V30V4.5V 10V±20V5.3A0.06Ohm30VROHS3 Compliant-PowerTrench®unknown
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