Fairchild/ON Semiconductor NDS0605

Name: NDS0605
Brand: Fairchild/ON Semiconductor
SKU: 2848474-NDS0605
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS0605

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848474-NDS0605

Description:: MOSFET P-CH 60V 180MA SOT-23

ECAD Model:

Datasheet:: NDS0605

Specifications

Fairchild/ON Semiconductor NDS0605 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS0605.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
5Ohm
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-180mA
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
360mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
Turn On Delay Time
5 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
79pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180mA Ta
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 10V
Rise Time
6.3ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.3 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
180mA
Threshold Voltage
-1.7V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Dual Supply Voltage
-60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-1.7 V
Feedback Cap-Max (Crss)
5 pF
Height
1.2mm
Length
2.92mm
Width
3.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDS0605 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.

NDS0605 Features
High saturation current
High density cell design for low RDS(ON)
?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V
Voltage controlled p-channel small signal switch

NDS0605 Applications
Load Switching
DC/DC converter
DC motor control
Battery protection
Power management control

NDS0605 More Descriptions

P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω
P-Channel 60 V 5 Ohm Surface Mount Field Effect Transistor - SOT-23
Transistor PNP Field Effect NDS0605 FAIRCHILD RoHS milliampere=180 V=60 SOt23Halfin
Trans MOSFET P-CH 60V 0.18A 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
This P-Channel enhancement mode power field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Certification