Fairchild/ON Semiconductor NDP7060

NDP7060 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 550 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Its maximum pulsed drain current is 225A, which is also its maximum rating peak drainage current.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.8V.Its overall power consumption can be reduced by using drive voltage (10V).


NDP7060 Features
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 225A.
a threshold voltage of 2.8V

NDP7060 Applications
There are a lot of ON Semiconductor NDP7060 applications of single MOSFETs transistors.

DC/DC converters
LCD/LED/ PDP TV Lighting
Motor Drives and Uninterruptible Power Supples
LCD/LED TV
Consumer Appliances
Server power supplies
Industrial Power Supplies
Synchronous Rectification
Motor control
Synchronous Rectification for ATX 1 Server I Telecom PSU