ON Semiconductor NDF05N50ZG
- Part Number:
- NDF05N50ZG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2483281-NDF05N50ZG
- Description:
- MOSFET N-CH 500V TO-220FP
- ECAD Model:
-
- Datasheet:
- NDF,NDD05N50Z
ON Semiconductor NDF05N50ZG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NDF05N50ZG.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Supplier Device PackageTO-220FP
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max30W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds632pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- RoHS StatusROHS3 Compliant
NDF05N50ZG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 632pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NDF05N50ZG Features
a 500V drain to source voltage (Vdss)
NDF05N50ZG Applications
There are a lot of Rochester Electronics, LLC
NDF05N50ZG applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 632pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NDF05N50ZG Features
a 500V drain to source voltage (Vdss)
NDF05N50ZG Applications
There are a lot of Rochester Electronics, LLC
NDF05N50ZG applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NDF05N50ZG More Descriptions
N-Channel 500 V 1.5 Ohm 28 W Flange Mount Power MOSFET-TO-220FP
Power MOSFET 500V 5A 1.5 Ohm Single N-Channel TO-220FP
NDF05N50ZG N-channel MOSFET Transistor, 5.5 A, 500 V, 3-Pin TO-220FP | ON Semiconductor NDF05N50ZG
Tube Through Hole N-Channel Single Mosfet Transistor 5.5A Tc 5A 28W 14ns
Trans MOSFET N-CH 500V 5.5A 3-Pin(3 Tab) TO-220FP Rail - Rail/Tube
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power MOSFET 500V 5A 1.5 Ohm Single N-Channel TO-220FP
NDF05N50ZG N-channel MOSFET Transistor, 5.5 A, 500 V, 3-Pin TO-220FP | ON Semiconductor NDF05N50ZG
Tube Through Hole N-Channel Single Mosfet Transistor 5.5A Tc 5A 28W 14ns
Trans MOSFET N-CH 500V 5.5A 3-Pin(3 Tab) TO-220FP Rail - Rail/Tube
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to NDF05N50ZG.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLifecycle StatusFactory Lead TimeSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningLead FreeView Compare
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NDF05N50ZGThrough HoleTO-220-3 Full PackTO-220FP-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)30W TcN-Channel1.5Ohm @ 2.2A, 10V4.5V @ 50μA632pF @ 25V5.5A Tc28nC @ 10V500V10V±30VROHS3 Compliant------------------------------ -
Through HoleTO-220-3 Full PackTO-220FP-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)24W TcN-Channel4.8Ohm @ 1A, 10V4.5V @ 50μA274pF @ 25V2.4A Tc10.1nC @ 10V600V10V±30VROHS3 Compliant-----------------------------
-
Through HoleTO-220-3 Full PackTO-220FP-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)35W TcN-Channel850mOhm @ 3.6A, 10V4.5V @ 100μA1.095pF @ 25V8.5A Tc46nC @ 10V500V10V±30VROHS3 Compliant-----------------------------
-
Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)30W TcN-Channel1.5 Ω @ 2.2A, 10V4.5V @ 50μA632pF @ 25V5.5A Tc28nC @ 10V-10V±30VRoHS CompliantLAST SHIPMENTS (Last Updated: 5 days ago)5 WeeksNO3SILICON2010e3yes3EAR99Tin (Sn)FET General Purpose Powers31SingleENHANCEMENT MODE30WISOLATED11 ns15ns14 ns24 ns5.5ATO-220AB30V500V20ANoLead Free
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