ON Semiconductor NDF02N60ZG
- Part Number:
- NDF02N60ZG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586828-NDF02N60ZG
- Description:
- MOSFET N-CH 600V 2.4A TO220FP
- ECAD Model:
-
- Datasheet:
- NDx02N60Z
ON Semiconductor NDF02N60ZG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NDF02N60ZG.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Supplier Device PackageTO-220FP
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max24W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.8Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds274pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.4A Tc
- Gate Charge (Qg) (Max) @ Vgs10.1nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- RoHS StatusROHS3 Compliant
NDF02N60ZG Overview
A device's maximum input capacitance is 274pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
NDF02N60ZG Features
a 600V drain to source voltage (Vdss)
NDF02N60ZG Applications
There are a lot of Rochester Electronics, LLC
NDF02N60ZG applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 274pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
NDF02N60ZG Features
a 600V drain to source voltage (Vdss)
NDF02N60ZG Applications
There are a lot of Rochester Electronics, LLC
NDF02N60ZG applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
NDF02N60ZG More Descriptions
Power MOSFET 600V 2.4A 4.8 Ohm Single N-Channel TO-220FP
NDF02N60ZG N-channel MOSFET Transistor, 2.4 A, 600 V, 3-Pin TO-220FP | ON Semiconductor NDF02N60ZG
Trans MOSFET N-CH 600V 2.4A 3-Pin(3 Tab) TO-220FP Rail - Rail/Tube
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
NDF02N60ZG N-channel MOSFET Transistor, 2.4 A, 600 V, 3-Pin TO-220FP | ON Semiconductor NDF02N60ZG
Trans MOSFET N-CH 600V 2.4A 3-Pin(3 Tab) TO-220FP Rail - Rail/Tube
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to NDF02N60ZG.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimeView Compare
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NDF02N60ZGThrough HoleTO-220-3 Full PackTO-220FP-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)24W TcN-Channel4.8Ohm @ 1A, 10V4.5V @ 50μA274pF @ 25V2.4A Tc10.1nC @ 10V600V10V±30VROHS3 Compliant-- -
Through HoleTO-220-3 Full PackTO-220FP-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)27W TcN-Channel3.6Ohm @ 1.2A, 10V4.5V @ 50μA372pF @ 25V3.1A Tc18nC @ 10V600V10V±30VROHS3 Compliant-
-
-----Obsolete1 (Unlimited)-----------RoHS Compliant4 Weeks
-
Through HoleTO-220-3 Full PackTO-220FP-55°C~150°C TJTubeLast Time Buy1 (Unlimited)MOSFET (Metal Oxide)36W TcN-Channel950mOhm @ 3.5A, 10V4.5V @ 100μA1.14pF @ 25V8.4A Tc39nC @ 10V600V10V±30VROHS3 Compliant-
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