Fairchild/ON Semiconductor NDC7003P
- Part Number:
- NDC7003P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473337-NDC7003P
- Description:
- MOSFET 2P-CH 60V 0.34A SSOT6
- Datasheet:
- NDC7003P
Fairchild/ON Semiconductor NDC7003P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDC7003P.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time23 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance5Ohm
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- Max Power Dissipation960mW
- Terminal FormGULL WING
- Current Rating-220mA
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation960mW
- Turn On Delay Time3.2 ns
- Power - Max700mW
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5 Ω @ 340mA, 10V
- Vgs(th) (Max) @ Id3.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds66pF @ 25V
- Current - Continuous Drain (Id) @ 25°C340mA
- Gate Charge (Qg) (Max) @ Vgs2.2nC @ 10V
- Rise Time10ns
- Fall Time (Typ)10 ns
- Turn-Off Delay Time8 ns
- Continuous Drain Current (ID)-340mA
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.34A
- Drain to Source Breakdown Voltage-60V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Nominal Vgs-1.9 V
- Min Breakdown Voltage60V
- Height1.1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NDC7003P Description
These dual P?Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi?ˉs proprietary Trench Technology. This very high density process has been designed to minimize on?state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch. NDC7003P Features
? ?0.34 A, ?60 V RDS(ON) = 5 @ VGS = ?10 V RDS(ON) = 7 @ VGS = ?4.5 V ? Low Gate Charge ? Fast Switching Speed ? High Performance Trench Technology for Low RDS(ON) ? SUPERSOT?6 Package: Small Footprint (72% smaller than standard SO?8); Low Profile (1 mm Thick) ? This is a Pb?Free Device NDC7003P Applications
This product is particularly suited to low voltage applications requiring a low current high side switch.
These dual P?Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi?ˉs proprietary Trench Technology. This very high density process has been designed to minimize on?state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch. NDC7003P Features
? ?0.34 A, ?60 V RDS(ON) = 5 @ VGS = ?10 V RDS(ON) = 7 @ VGS = ?4.5 V ? Low Gate Charge ? Fast Switching Speed ? High Performance Trench Technology for Low RDS(ON) ? SUPERSOT?6 Package: Small Footprint (72% smaller than standard SO?8); Low Profile (1 mm Thick) ? This is a Pb?Free Device NDC7003P Applications
This product is particularly suited to low voltage applications requiring a low current high side switch.
NDC7003P More Descriptions
Transistor MOSFET Array Dual P-CH 60V 0.34A 6-Pin TSOT-23 T/R - Tape and Reel
Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω
Transistor MOSFET P-Channel 60 Volt 0.34A 6-Pin SuperSOT
Dual P-Channel 60 V 5 Ohm SMT PowerTrench Mosfet - SSOT-6
DUAL P CH MOSFET, -60V, SUPER SOT-6; Tra; DUAL P CH MOSFET, -60V, SUPER SOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-340mA; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:1.2ohm; Rds(on) Test Voltage Vgs:-10V
These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω
Transistor MOSFET P-Channel 60 Volt 0.34A 6-Pin SuperSOT
Dual P-Channel 60 V 5 Ohm SMT PowerTrench Mosfet - SSOT-6
DUAL P CH MOSFET, -60V, SUPER SOT-6; Tra; DUAL P CH MOSFET, -60V, SUPER SOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-340mA; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:1.2ohm; Rds(on) Test Voltage Vgs:-10V
These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
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