Fairchild/ON Semiconductor NDC7001C

Name: NDC7001C
Brand: Fairchild/ON Semiconductor
SKU: 2847932-NDC7001C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDC7001C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847932-NDC7001C

Description:: MOSFET N/P-CH 60V SSOT6

ECAD Model:

Datasheet:: NDC7001C

Specifications

Fairchild/ON Semiconductor NDC7001C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDC7001C.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
2Ohm
Subcategory
Other Transistors
Max Power Dissipation
700mW
Terminal Form
GULL WING
Current Rating
350mA
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
960mW
Turn On Delay Time
2.8 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 510mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
510mA 340mA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V
Rise Time
10ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
10 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
510mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.51A
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
2.1 V
Min Breakdown Voltage
60V
Height
900μm
Length
3mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDC7001C Description

The NDC7001C is a dual N and P-Channel Enhancement Mode Field Effect Transistor made with ON Semiconductor's unique DMOS technology. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. Low voltage, low current, switching, and power supply applications are ideal for the NDC7001C transistor.

NDC7001C Features

Q1:
0.51 A, 60 V
RDS(ON) = 2 Ω @ VGS = 10 V
RDS(ON) = 4 Ω @ VGS = 4.5 V
Q2:
-0.34 A, 60 V
RDS(ON) = 5 Ω @ VGS = -10 V
RDS(ON) = 7.5 Ω @ VGS = -4.5 V
High density cell design for low RDS (ON)
Design using copper lead-frame for superior thermal and electrical capabilities

NDC7001C Applications

Industrial
Power Management
Automotive
Vehicle Electrification
ADAS
Powertrain, Safety and Security
Body Electronics and LED Lighting
Technology

NDC7001C More Descriptions

Trans MOSFET N/P-CH 60V 0.51A/0.34A 6-Pin TSOT-23 T/R / MOSFET N/P-CH 60V SSOT6
Dual N & P Channel Enhancement Mode Field Effect Transistor 60V
Dual N & P-Channel 60 V 2 Ohm SMT Field Effect Transistor - SSOT-6
Small Signal Field-Effect Transistor, 0.51A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.
MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:340mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:700mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Cont Current Id P Channel:340mA; Current Id Max:510mA; Current Temperature:25°C; External Depth:2.92mm; External Length / Height:1.02mm; External Width:2.85mm; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Max:2ohm; On State Resistance N Channel Max:2ohm; On State Resistance P Channel Max:5ohm; Package / Case:SuperSOT-6; Power Dissipation P Channel 2:700mW; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Pulse Current Idm:1A; SMD Marking:NDC7001C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:50V; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

Certification