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NDC7002N

Fairchild/ON Semiconductor NDC7002N

Part Number:
NDC7002N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473245-NDC7002N
Description:
MOSFET 2N-CH 50V 0.51A SSOT6
ECAD Model:
Datasheet:
NDC7002N

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Specifications
Fairchild/ON Semiconductor NDC7002N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDC7002N.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    5 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    36mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1998
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    2Ohm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    700mW
  • Terminal Form
    GULL WING
  • Current Rating
    350mA
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    960mW
  • Turn On Delay Time
    6 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 510mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    20pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    1nC @ 10V
  • Rise Time
    6ns
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    510mA
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.51A
  • Drain to Source Breakdown Voltage
    50V
  • Dual Supply Voltage
    50V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.9 V
  • Height
    900μm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NDC7002N Description
The ON Semiconductor NDC7002N is a dual N-Channel enhancement mode power field effect transistor built using the company's patented high cell density DMOS technology.

NDC7002N Features
High-density cell design for extremely low RDS(ON)
Proprietary SuperSOTTM-6 package design using the copper lead frame for superior thermal and electrical capabilities
0.51 A, 50 V.   RDS(ON) = 2 Ω @ VGS = 10 V
High saturation current

NDC7002N Applications
General usage and suitable for many different applications.
NDC7002N More Descriptions
Transistor MOSFET Array Dual N-CH 50V 0.51A 6-Pin TSOT-23 T/R - Tape and Reel
Dual N-Channel Enhancement Mode Field Effect Transistor 50V, 0.51A, 2Ω
Dual N-Channel 50 V 2 Ohm SMT Field Effect Transistor -SS0T-6
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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