Fairchild/ON Semiconductor NDC632P

Name: NDC632P
Brand: Fairchild/ON Semiconductor
SKU: 3813738-NDC632P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDC632P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813738-NDC632P

Description:: MOSFET P-CH 20V 2.7A SSOT-6

ECAD Model:

Datasheet:: NDC632P

Specifications

Fairchild/ON Semiconductor NDC632P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDC632P.

Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
SuperSOT™-6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.6W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
140mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 10V
Current - Continuous Drain (Id) @ 25°C
2.7A Ta
Gate Charge (Qg) (Max) @ Vgs
15nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
-8V
RoHS Status
ROHS3 Compliant

Description

NDC632P Overview
A device's maximal input capacitance is 550pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.7V 4.5V).

NDC632P Features
a 20V drain to source voltage (Vdss)

NDC632P Applications
There are a lot of Rochester Electronics, LLC
NDC632P applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

NDC632P More Descriptions

Trans MOSFET P-CH 20V 2.7A 6-Pin SuperSOT T/R
Tape & Reel (TR) Surface Mount P-Channel MOSFET (Metal Oxide) Mosfet Transistor 2.7A Ta 2.7A 1.6W 40ns
Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs P-Channel FET LL Enhancement Mode
MOSFET P-CH 20V 2.7A SUPERSOT6
French Electronic Distributor since 1988
20V P-CH. FET, 140 MO, SSOT6 MOSFET, P, SUPERSOT-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:2.7A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.7V; Case Style:SuperSOT-6; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.92mm; External Length / Height:1.02mm; No. of Pins:6; Power Dissipation:1.8W; Power, Pd:1.8W; SMD Marking:NDC932P; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Uni / Bi Directional Polarity:P; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:-2.7V; Width, External:2.85mm

Certification