ON Semiconductor NCV8440STT1G

NCV8440STT1G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 110 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 155pF @ 35V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.6A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 52V in order to maintain normal operation.Operating this transistor requires a 59V drain to source voltage (Vdss).By using drive voltage (3.5V 10V), this device helps reduce its overall power consumption.

NCV8440STT1G Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 2.6A
based on its rated peak drain current 10A.
a 59V drain to source voltage (Vdss)


NCV8440STT1G Applications
There are a lot of ON Semiconductor
NCV8440STT1G applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools