ON Semiconductor MTP50P03HDLG
- Part Number:
- MTP50P03HDLG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586559-MTP50P03HDLG
- Description:
- MOSFET P-CH 30V 50A TO220AB
- Datasheet:
- MTP50P03HDLG
ON Semiconductor MTP50P03HDLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTP50P03HDLG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance25MOhm
- Additional FeatureAVALANCHE RATED
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating-50A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Case ConnectionDRAIN
- Turn On Delay Time22 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 25A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs100nC @ 5V
- Rise Time340ns
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±15V
- Fall Time (Typ)218 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)50A
- Threshold Voltage-1.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)15V
- Drain to Source Breakdown Voltage30V
- Height14.478mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MTP50P03HDLG Description
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin
against unexpected voltage transients.
MTP50P03HDLG Features Avalanche Energy Specified Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature These are Pb?Free Devices*
MTP50P03HDLG Features Avalanche Energy Specified Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature These are Pb?Free Devices*
MTP50P03HDLG More Descriptions
Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level
Trans MOSFET P-CH 30V 50A 3-Pin(3 Tab) TO-220AB Rail
ON SEMI MTP50P03HDLG / MOSFET P-CHAN 50A 30V TO220AB
P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Onsemi MTP50P03HDLG
Power Field-Effect Transistor, 50A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET P-CH 30V 50A 3-Pin(3 Tab) TO-220AB Rail
ON SEMI MTP50P03HDLG / MOSFET P-CHAN 50A 30V TO220AB
P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Onsemi MTP50P03HDLG
Power Field-Effect Transistor, 50A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 October 2023
Compare the Differences Between TDA7377 and TDA7388
Ⅰ. What is an amplifier?Ⅱ. Overview of TDA7377Ⅲ. Overview of TDA7388Ⅳ. TDA7377 vs TDA7388: SymbolⅤ. TDA7377 vs TDA7388: Technical parametersⅥ. TDA7377 vs TDA7388: FeaturesⅦ. TDA7377 vs TDA7388: Power... -
13 October 2023
Universal Logic Gate Chip SN7406N: Equivalent, Working Principle and Package
Ⅰ. What is SN7406N?Ⅱ. Symbol, footprint and pinout of SN7406NⅢ. Technical parameters of SN7406NⅣ. Features of SN7406NⅤ. Working principle of SN7406NⅥ. Dimensions and package of SN7406NⅦ. Manufacturer of... -
13 October 2023
LM3481MM NOPB Converter Features, Pin Configuraiton and Other Details
Ⅰ. Overview of LM3481MM/NOPBⅡ. Symbol and footprint of LM3481MM/NOPBⅢ. Technical parameters of LM3481MM/NOPBⅣ. Features of LM3481MM/NOPBⅤ. Pin configuration of LM3481MM/NOPBⅥ. Application of LM3481MM/NOPBⅦ. How to improve the efficiency... -
16 October 2023
What Is H1102N Pulse Ethernet Transformer?
Ⅰ. What is a transformer?Ⅱ. Overview of H1102NLⅢ. Pin configuration, symbol and footprint of H1102NLⅣ. Technical parameters of H1102NLⅤ. Features of H1102NLⅥ. Working principle of H1102NLⅦ. Dimensions and...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.