MTP50P03HDLG

ON Semiconductor MTP50P03HDLG

Part Number:
MTP50P03HDLG
Manufacturer:
ON Semiconductor
Ventron No:
3586559-MTP50P03HDLG
Description:
MOSFET P-CH 30V 50A TO220AB
ECAD Model:
Datasheet:
MTP50P03HDLG

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Specifications
ON Semiconductor MTP50P03HDLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTP50P03HDLG.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 5 days ago)
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    25MOhm
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -50A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    22 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 25A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    100nC @ 5V
  • Rise Time
    340ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±15V
  • Fall Time (Typ)
    218 ns
  • Turn-Off Delay Time
    90 ns
  • Continuous Drain Current (ID)
    50A
  • Threshold Voltage
    -1.5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    15V
  • Drain to Source Breakdown Voltage
    30V
  • Height
    14.478mm
  • Length
    10.2616mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MTP50P03HDLG Description This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

MTP50P03HDLG Features Avalanche Energy Specified Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature These are Pb?Free Devices*
MTP50P03HDLG More Descriptions
Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level
Trans MOSFET P-CH 30V 50A 3-Pin(3 Tab) TO-220AB Rail
ON SEMI MTP50P03HDLG / MOSFET P-CHAN 50A 30V TO220AB
P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Onsemi MTP50P03HDLG
Power Field-Effect Transistor, 50A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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