ON Semiconductor MTD6P10E
- Part Number:
- MTD6P10E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2852086-MTD6P10E
- Description:
- MOSFET P-CH 100V 6A DPAK
- ECAD Model:
-
- Datasheet:
- MTD6P10E
ON Semiconductor MTD6P10E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTD6P10E.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codenot_compliant
- Current Rating-6A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.75W Ta 50W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs660m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds840pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time29ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±15V
- Continuous Drain Current (ID)6A
- Drain Current-Max (Abs) (ID)6A
- Drain-source On Resistance-Max0.66Ohm
- Pulsed Drain Current-Max (IDM)18A
- Avalanche Energy Rating (Eas)180 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
Description
The MTD6P10E is a Power MOSFET, 6 Amps, 100 Volts with P?Channel DPAK. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.
Features
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Pb?Free Packages are Available
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Applications
Power supplies
Converters
PWM motor controls
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters.
Automotive applications
Switch, buck and synchronous rectification.
Uninterruptible Power Supplies (UPS)
Small motor control
The MTD6P10E is a Power MOSFET, 6 Amps, 100 Volts with P?Channel DPAK. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.
Features
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Pb?Free Packages are Available
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Applications
Power supplies
Converters
PWM motor controls
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters.
Automotive applications
Switch, buck and synchronous rectification.
Uninterruptible Power Supplies (UPS)
Small motor control
MTD6P10E More Descriptions
Power Field-Effect Transistor, 6A I(D), 100V, 0.66ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CH 100V 6A DPAK
RES SMD 1.6M OHM 5% 1/10W 0603
MOSFET P-CH 100V 6A DPAK
RES SMD 1.6M OHM 5% 1/10W 0603
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