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MTD3055VL

Fairchild/ON Semiconductor MTD3055VL

Part Number:
MTD3055VL
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481576-MTD3055VL
Description:
MOSFET N-CH 60V 12A DPAK
ECAD Model:
Datasheet:
MTD3055VL

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Specifications
Fairchild/ON Semiconductor MTD3055VL technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MTD3055VL.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    107mOhm
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Current Rating
    12A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    3.9W Ta 48W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.9W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 6A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 5V
  • Rise Time
    190ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    12A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    42A
  • Dual Supply Voltage
    60V
  • Avalanche Energy Rating (Eas)
    72 mJ
  • Nominal Vgs
    1.5 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MTD3055VL Description
The MTD3055VL is a 60V N-channel logic-level MOSFET, which has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET MTD3055VL features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC/DC power supply designs with higher overall efficiency. This product is general usage and suitable for many different applications.

MTD3055VL Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
12A, 60 V. RDS(ON)= 0.180Ω@VGS = 5 V
Critical DC electrical parameters are specified at elevated temperatures.
Low drive requirements allow operation directly from logic drivers. Vgs(th) < 2 V.
A rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.

MTD3055VL Applications
Power Supplies
Motor Control
Bridge Circuits
Motor Starters
Reduced Voltage Starters
Adjustable-Speed Drives
MTD3055VL More Descriptions
N-Channel 60 V 180 mOhm SMT Enhancement Mode Field Effect Transistor-TO-252-3
Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, SMD, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.5V; Power Dissipat
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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