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MTB30P06VT4G

ON Semiconductor MTB30P06VT4G

Part Number:
MTB30P06VT4G
Manufacturer:
ON Semiconductor
Ventron No:
2490697-MTB30P06VT4G
Description:
MOSFET P-CH 60V 30A D2PAK
ECAD Model:
Datasheet:
MTB30P06VT4G

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Specifications
ON Semiconductor MTB30P06VT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTB30P06VT4G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    3W Ta 125W Tc
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    80mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.19pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±15V
  • RoHS Status
    ROHS3 Compliant
Description
MTB30P06VT4G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.19pF @ 25V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

MTB30P06VT4G Features
a 60V drain to source voltage (Vdss)


MTB30P06VT4G Applications
There are a lot of Rochester Electronics, LLC
MTB30P06VT4G applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
MTB30P06VT4G More Descriptions
Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK
MTB30P06VT4G P-channel MOSFET Transistor, 30 A, 60 V, 3-Pin D2PAK | ON Semiconductor MTB30P06VT4G
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 30A Tc 30A 3W 52.4ns
Trans MOSFET P-CH 60V 30A 3-Pin(2 Tab) D2PAK T/R
P Channel Mosfet, -60V, 30A, D2-Pak; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V Rohs Compliant: Yes |Onsemi MTB30P06VT4G
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage high speed switching applications in power supplies converters and power motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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