NXP USA Inc. MRF6VP41KHR7
- Part Number:
- MRF6VP41KHR7
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477229-MRF6VP41KHR7
- Description:
- FET RF 2CH 110V 450MHZ NI-1230
- ECAD Model:
-
- Datasheet:
- MRF6VP41KHR7
NXP USA Inc. MRF6VP41KHR7 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6VP41KHR7.
- Package / CaseNI-1230
- PackagingTape & Reel (TR)
- Published2012
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated110V
- Frequency450MHz
- Base Part NumberMRF6VP41
- Current - Test150mA
- Transistor TypeLDMOS (Dual)
- Gain20dB
- Power - Output1000W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRF6VP41KHR7 Description
MRF6VP41KHR7 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6VP41KHR7 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6VP41KHR7 has the common source configuration.
MRF6VP41KHR7 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6VP41KHR7 Applications
ISM applications
DC large signal applications
MRF6VP41KHR7 More Descriptions
Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
MOSFET,RF,N CH,50V,NI-1230; Transistor Type:RF MOSFET; Drain Source Voltage Vds:110V; Continuous Drain Current Id:4A; Operating Frequency Range:3.1GHz to 3.5GHz; RF Transistor Case:NI-1230; No. of Pins:4; SVHC:No SVHC (19-Dec-2011)
Transistor; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20dB; Gate-Source Voltage:10V; Operating Frequency Max:130MHz; Output Power, Pout:1kW; Package/Case:Case 375D; Termination Type:SMD
MOSFET,RF,N CH,50V,NI-1230; Transistor Type:RF MOSFET; Drain Source Voltage Vds:110V; Continuous Drain Current Id:4A; Operating Frequency Range:3.1GHz to 3.5GHz; RF Transistor Case:NI-1230; No. of Pins:4; SVHC:No SVHC (19-Dec-2011)
Transistor; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20dB; Gate-Source Voltage:10V; Operating Frequency Max:130MHz; Output Power, Pout:1kW; Package/Case:Case 375D; Termination Type:SMD
The three parts on the right have similar specifications to MRF6VP41KHR7.
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ImagePart NumberManufacturerPackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - RatedFrequencyBase Part NumberCurrent - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusFactory Lead TimeSurface MountTransistor Element MaterialNumber of TerminationsECCN CodeHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)JESD-609 CodeTerminal FinishReach Compliance CodeView Compare
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MRF6VP41KHR7NI-1230Tape & Reel (TR)2012Discontinued1 (Unlimited)110V450MHzMRF6VP41150mALDMOS (Dual)20dB1000W50VROHS3 Compliant--------------------------- -
NI-780STape & Reel (TR)2011ActiveNot Applicable120V1.3GHzMRF6V13250100mALDMOS22.7dB250W50VROHS3 Compliant10 WeeksYESSILICON2EAR998541.29.00.75FET General Purpose PowerDUALFLAT26040R-CDFP-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCEAMPLIFIERN-CHANNEL120VMETAL-OXIDE SEMICONDUCTOR476W---
-
TO-272-4Tape & Reel (TR)2006Obsolete3 (168 Hours)68V880MHzMRF6S9125950mALDMOS20.2dB27W28VNon-RoHS Compliant-----------------------e0Tin/Lead (Sn/Pb)not_compliant
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NI-780STape & Reel (TR)2011Discontinued3 (168 Hours)120V1.3GHzMRF6V13250100mALDMOS22.7dB250W50VROHS3 Compliant----EAR99---------------------
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