NXP USA Inc. MRF6S20010GNR1
- Part Number:
- MRF6S20010GNR1
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2474942-MRF6S20010GNR1
- Description:
- FET RF 68V 2.17GHZ TO270-2 GW
- ECAD Model:
-
- Datasheet:
- MRF6S20010GNR1
NXP USA Inc. MRF6S20010GNR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6S20010GNR1.
- Factory Lead Time10 Weeks
- Package / CaseTO-270BA
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated68V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency2.17GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF6S20010
- JESD-30 CodeR-PDFM-G2
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test130mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain15.5dB
- DS Breakdown Voltage-Min68V
- Power - Output10W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF6S20010GNR1 Description MRF6S20010GNR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF6S20010GNR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6S20010GNR1 has the common source configuration. MRF6S20010GNR1 Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging for lower junction temperatures MRF6S20010GNR1 Applications ISM applications DC large signal applications
MRF6S20010GNR1 More Descriptions
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2NXP Semiconductors SCT
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R
MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
MOSFET RF N-CH 28V 10W TO2702 GW
RF MOSFET Transistors HV6 2GHZ 10W
RF MOSFET LDMOS 28V TO270-2 GULL
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
RF S BAND, N-CHANNEL POWER MOSFE
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2NXP Semiconductors SCT
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R
MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
MOSFET RF N-CH 28V 10W TO2702 GW
RF MOSFET Transistors HV6 2GHZ 10W
RF MOSFET LDMOS 28V TO270-2 GULL
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
RF S BAND, N-CHANNEL POWER MOSFE
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
The three parts on the right have similar specifications to MRF6S20010GNR1.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - RatedHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusReach Compliance CodeView Compare
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MRF6S20010GNR110 WeeksTO-270BAYESSILICONTape & Reel (TR)2005e3Active3 (168 Hours)2EAR99Matte Tin (Sn)68V8541.29.00.75FET General Purpose PowerDUALGULL WING2602.17GHz40MRF6S20010R-PDFM-G2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE130mAAMPLIFIERN-CHANNELLDMOS15.5dB68V10WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant-- -
-TO-272-4--Tape & Reel (TR)2006e0Obsolete3 (168 Hours)--Tin/Lead (Sn/Pb)68V-----880MHz-MRF6S9125-------950mA--LDMOS20.2dB-27W-28VNon-RoHS Compliantnot_compliant
-
-NI-880--Tape & Reel (TR)2007-Obsolete3 (168 Hours)-EAR99-68V-----1.93GHz~1.99GHz-MRF6S19140-------1.15A--LDMOS16dB-29W-28VROHS3 Compliant-
-
-NI-880YESSILICONTape & Reel (TR)2012-Obsolete3 (168 Hours)2EAR99-68V8541.29.00.75-DUALFLAT2602.39GHz40MRF6S24140R-CDFM-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE1.3A-N-CHANNELLDMOS15.2dB68V28WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant-
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