ON Semiconductor MMFT960T1

MMFT960T1 Overview
Its continuous drain current is 300mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 0.3A, and it is the maximum continuous current the device can conduct.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.7Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).

MMFT960T1 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
single MOSFETs transistor is 1.7Ohm
a 60V drain to source voltage (Vdss)


MMFT960T1 Applications
There are a lot of ON Semiconductor
MMFT960T1 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters