ON Semiconductor MJE5850G
- Part Number:
- MJE5850G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585298-MJE5850G
- Description:
- TRANS PNP 300V 8A TO220AB
- ECAD Model:
-
- Datasheet:
- MJE5850G
ON Semiconductor MJE5850G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE5850G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- SeriesSWITCHMODE™
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation80W
- Peak Reflow Temperature (Cel)260
- Current Rating-8A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A 5V
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic5V @ 3A, 8A
- Collector Emitter Breakdown Voltage300V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)6V
- hFE Min15
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE5850G Overview
DC current gain in this device equals 5 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 5V @ 3A, 8A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.In extreme cases, the collector current can be as low as 8A volts.
MJE5850G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A
MJE5850G Applications
There are a lot of ON Semiconductor
MJE5850G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 5 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 5V @ 3A, 8A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.In extreme cases, the collector current can be as low as 8A volts.
MJE5850G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A
MJE5850G Applications
There are a lot of ON Semiconductor
MJE5850G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE5850G More Descriptions
Bipolar (Bjt) Single Transistor, Pnp, -300 V, 80 W, -8 A, 15 Rohs Compliant: Yes |Onsemi MJE5850G
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 300 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB
8.0 A, 300 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5 | ON Semiconductor MJE5850G
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 300 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB
8.0 A, 300 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5 | ON Semiconductor MJE5850G
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
The three parts on the right have similar specifications to MJE5850G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceJEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Additional FeatureFrequencyGain Bandwidth ProductCurrent - Collector Cutoff (Max)Transition FrequencyTerminal PositionReach Compliance CodeJESD-30 CodeQualification StatusConfigurationView Compare
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MJE5850GACTIVE (Last Updated: 1 day ago)8 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTubeSWITCHMODE™2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V80W260-8A4031Single80WCOLLECTORSWITCHINGPNPPNP300V8A5 @ 5A 5VTO-220AB5V @ 3A, 8A300V2V350V6V156.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free--------------- -
--Through HoleTO-220-3-----65°C~150°C TJTubeSWITCHMODE™---Obsolete1 (Unlimited)----------------PNP--5 @ 5A 5V-5V @ 3A, 8A----------Non-RoHS Compliant-TO-220AB80W300V8A----------
-
ACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube-2001e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V40W260-1A4031Single40WCOLLECTORSWITCHINGPNPPNP300V1A30 @ 300mA 10VTO-220AB1V @ 200mA, 1A300V1V300V5V306.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free----LEADFORM OPTIONS ARE AVAILABLE10MHz10MHz1mA10MHz-----
-
--Through HoleTO-225AA, TO-126-3NO--SILICON-65°C~150°C TJBulk--e3noObsolete1 (Unlimited)3-MATTE TIN---NOT SPECIFIED-NOT SPECIFIED31---SWITCHINGNPNNPN--40 @ 1A 1V------------ROHS3 Compliant--40W40V4A---100μA ICBO-SINGLEunknownR-PSFM-T3COMMERCIALSINGLE
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