ON Semiconductor MJE5730

Name: MJE5730
Brand: ON Semiconductor
SKU: 3553872-MJE5730
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE5730

Manufacturer:: ON Semiconductor

Ventron No:: 3553872-MJE5730

Description:: TRANS PNP 300V 1A TO220AB

ECAD Model:

Datasheet:: MJE5730

Specifications

ON Semiconductor MJE5730 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE5730.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
1A
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
300V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

MJE5730 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 10MHz.During maximum operation, collector current can be as low as 1A volts.

MJE5730 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

MJE5730 Applications
There are a lot of ON Semiconductor
MJE5730 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE5730 More Descriptions

1.0 A, 300 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistor Package/Case:TO-220AB

Product Comparison

The three parts on the right have similar specifications to MJE5730.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Polarity

Power Dissipation

Continuous Collector Current

Terminal Position

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
MJE5730

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Through Hole

TO-220-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2006

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

LEADFORM OPTIONS ARE AVAILABLE

8541.29.00.95

Other Transistors

-300V

40W

240

not_compliant

1A

30

3

Not Qualified

1

Single

COLLECTOR

SWITCHING

10MHz

PNP

PNP

1V

1A

30 @ 300mA 10V

1mA

TO-220AB

1V @ 200mA, 1A

300V

10MHz

1V

300V

5V

30

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-
MJE5731

ON Semiconductor

LAST SHIPMENTS (Last Updated: 10 hours ago)

Through Hole

TO-220-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2006

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

LEADFORM OPTIONS ARE AVAILABLE

8541.29.00.95

Other Transistors

-350V

40W

240

not_compliant

1A

30

3

Not Qualified

1

Single

COLLECTOR

SWITCHING

10MHz

PNP

PNP

1V

1A

30 @ 300mA 10V

1mA

TO-220AB

1V @ 200mA, 1A

350V

10MHz

1V

350V

5V

30

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

MJE5730 vs MJE5731
MJE5742

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Through Hole

TO-220-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2008

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

8541.29.00.95

Other Transistors

400V

2W

240

not_compliant

8A

30

3

Not Qualified

1

Single

COLLECTOR

SWITCHING

-

-

NPN - Darlington

3V

8A

200 @ 2A 5V

-

TO-220AB

3V @ 400mA, 8A

400V

-

-

-

8V

-

Non-RoHS Compliant

Contains Lead

NPN

2W

8A

-

-

-

-

-

-

MJE5730 vs MJE5742
MJE521G

ON Semiconductor

-

Through Hole

TO-225AA, TO-126-3

NO

-

SILICON

-65°C~150°C TJ

Bulk

-

e3

no

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

-

-

-

-

NOT SPECIFIED

unknown

-

NOT SPECIFIED

3

COMMERCIAL

1

-

-

SWITCHING

-

NPN

NPN

-

-

40 @ 1A 1V

100μA ICBO

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

SINGLE

R-PSFM-T3

SINGLE

40W

40V

4A

MJE5730 vs MJE521G

Certification

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MJE5730 Specification

Part Number	Manufacturers	Description	Stock	Price
MJE5730G DISTI #MJE5730G	ON Semiconductor	Trans GP BJT PNP 300V 1A 3-Pin(3 Tab) TO-220AB Tub RoHS: Compliant	4000	1000 $0.4709 2500 $0.4686
MJE5730G DISTI #MJE5730G	ON Semiconductor	TRANS PNP 300V 1A TO220AB RoHS: Compliant	788	1 $1.28 50 $1.0858 100 $0.8919 500 $0.73676 1000 $0.58165
MJE5730 DISTI #MJE5730	ON Semiconductor	TRANS PNP 300V 1A TO220AB RoHS: Not Compliant	0
MJE5730G DISTI #MJE5730G	ON Semiconductor	Trans GP BJT PNP 300V 1A 3-Pin(3 Tab) TO-220AB Rai RoHS: Compliant	0	1000 $0.4819 1100 $0.4789 2100 $0.4729 5000 $0.4669 10000 $0.4549
MJE5730G DISTI #MJE5730G	ON Semiconductor	Trans GP BJT PNP 300V 1A 3-Pin(3 Tab) TO-220AB Rai RoHS: Compliant	0	1 $1.26 10 $1.08 100 $0.832 500 $0.739 1000 $0.591 2500 $0.529 10000 $0.51
MJE5730G DISTI #MJE5730G	ON Semiconductor	BIPOLAR TRANSISTOR, PNP, -300V, TO-220, Transisto	345	1 $1.26 10 $1.08 100 $0.832 500 $0.739 1000 $0.591 2500 $0.529 10000 $0.51
MJE5730G DISTI #MJE5730G	ON Semiconductor	Bipolar Transistors - BJT 1A 300V 40W PNP RoHS: Compliant	855	1 $1.22 10 $1.04 100 $0.795 500 $0.702 1000 $0.554
MJE5730 DISTI #MJE5730	ON Semiconductor	Bipolar Transistors - BJT 1A 300V 40W PNP RoHS: Not Compliant	0
MJE5730G DISTI #MJE5730G	ON Semiconductor	MJE Series 300 V 1 A PNP Silicon Plastic Power Tra RoHS: Compliant	720	25 $0.87 250 $0.605 1000 $0.555 2000 $0.53
MJE5730 DISTI #MJE5730	Motorola Semiconductor Products	Bipolar Junction Transistor, PNP Type, TO-220AB	672	1 $1.5 81 $0.45 445 $0.39
MJE5730 DISTI #MJE5730	Motorola Semiconductor Products	Bipolar Junction Transistor, PNP Type, TO-220AB	70	1 $1.54 4 $1.232 17 $0.77
MJE5730 DISTI #MJE5730	ON Semiconductor		33
MJE5730 DISTI #MJE5730	Motorola Semiconductor Products		840	5 $1.125 19 $0.7313 70 $0.4219 239 $0.36 515 $0.315
MJE5730 DISTI #MJE5730	Motorola Semiconductor Products		2022
MJE5730G DISTI #MJE5730G	ON Semiconductor	TRANSISTOR, PNP, -300V, -1A, TO-220 RoHS: Compliant	0	5 $2.16 25 $1.85 100 $1.27 250 $1.04 500 $0.851 1000 $0.787 5000 $0.742
MJE5730G DISTI #MJE5730G	ON Semiconductor	TRANSISTOR, PNP, -300V, -1A, TO-220 RoHS: Compliant	0	5 $0.858 25 $0.772 100 $0.591 250 $0.557 500 $0.522

ON Semiconductor MJE5730

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