ON Semiconductor MJE521
- Part Number:
- MJE521
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465802-MJE521
- Description:
- TRANS NPN 40V 4A TO225AA
- Datasheet:
- MJE521
ON Semiconductor MJE521 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE521.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating4A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMJE521
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A 1V
- Current - Collector Cutoff (Max)100μA ICBO
- Collector Emitter Breakdown Voltage40V
- Transition Frequency10MHz
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)4V
- hFE Min40
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
MJE521 Overview
DC current gain in this device equals 40 @ 1A 1V, which is the ratio of the base current to the collector current.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 10MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 4A volts.
MJE521 Features
the DC current gain for this device is 40 @ 1A 1V
the emitter base voltage is kept at 4V
the current rating of this device is 4A
a transition frequency of 10MHz
MJE521 Applications
There are a lot of ON Semiconductor
MJE521 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 1A 1V, which is the ratio of the base current to the collector current.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 10MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 4A volts.
MJE521 Features
the DC current gain for this device is 40 @ 1A 1V
the emitter base voltage is kept at 4V
the current rating of this device is 4A
a transition frequency of 10MHz
MJE521 Applications
There are a lot of ON Semiconductor
MJE521 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE521 More Descriptions
Tube Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 1A 1V 100muA ICBO 40W 270MHz
Bipolar (Bjt) Single Transistor, Npn, 40 V, 40 W, 4 A, 40 Rohs Compliant: Yes |Stmicroelectronics MJE521
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Audio Amplifier
Trans GP BJT NPN 40V 4A 3-Pin(3 Tab) SOT-32 Tube
TRANSISTOR, NPN,SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-32; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 1A; Hfe Min: 40; Termination Type: Through Hole
Bipolar (Bjt) Single Transistor, Npn, 40 V, 40 W, 4 A, 40 Rohs Compliant: Yes |Stmicroelectronics MJE521
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Audio Amplifier
Trans GP BJT NPN 40V 4A 3-Pin(3 Tab) SOT-32 Tube
TRANSISTOR, NPN,SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-32; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 1A; Hfe Min: 40; Termination Type: Through Hole
The three parts on the right have similar specifications to MJE521.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRoHS StatusLead FreeSurface MountSeriesCase ConnectionPower - MaxJEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Saturation VoltageFactory Lead TimeWeightAdditional FeatureFrequencyGain Bandwidth ProductHeightLengthWidthRadiation HardeningHTS CodeView Compare
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MJE521LAST SHIPMENTS (Last Updated: 3 days ago)Through HoleThrough HoleTO-225AA, TO-126-33SILICON-65°C~150°C TJBulk2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors40V40WNOT SPECIFIEDnot_compliant4ANOT SPECIFIEDMJE5213Not Qualified1Single40WSWITCHINGNPNNPN1V4A40 @ 1A 1V100μA ICBO40V10MHz400V40V4V40No SVHCNon-RoHS CompliantLead Free------------------
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LAST SHIPMENTS (Last Updated: 4 days ago)-Through HoleTO-220-33SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors-400V80W240not_compliant-8A30MJE58523Not Qualified1Single-SWITCHINGPNPPNP5V8A5 @ 5A 5V-400V--450V6V15-Non-RoHS CompliantLead FreeNOSWITCHMODE™COLLECTOR80WTO-220AB5V @ 3A, 8A2V----------
-
ACTIVE (Last Updated: 1 day ago)-Through HoleTO-220-33SILICON-65°C~150°C TJTube2001e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-300V40W260--1A40-3-1Single40WSWITCHINGPNPPNP300V1A30 @ 300mA 10V1mA300V10MHz-300V5V30No SVHCROHS3 CompliantLead FreeNO-COLLECTOR-TO-220AB1V @ 200mA, 1A1V2 Weeks4.535924gLEADFORM OPTIONS ARE AVAILABLE10MHz10MHz6.35mm6.35mm6.35mmNo-
-
LAST SHIPMENTS (Last Updated: 10 hours ago)-Through HoleTO-220-33SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors-350V40W240not_compliant1A30-3Not Qualified1Single-SWITCHINGPNPPNP1V1A30 @ 300mA 10V1mA350V10MHz-350V5V30-Non-RoHS CompliantContains LeadNO-COLLECTOR-TO-220AB1V @ 200mA, 1A1V--LEADFORM OPTIONS ARE AVAILABLE-10MHz----8541.29.00.95
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