ON Semiconductor MJE5731
- Part Number:
- MJE5731
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2473224-MJE5731
- Description:
- TRANS PNP 350V 1A TO-220AB
- Datasheet:
- MJE5731
ON Semiconductor MJE5731 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE5731.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 10 hours ago)
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC-350V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product10MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA 10V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
- Collector Emitter Breakdown Voltage350V
- Transition Frequency10MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJE5731 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 300mA 10V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 10MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
MJE5731 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJE5731 Applications
There are a lot of ON Semiconductor
MJE5731 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 300mA 10V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 10MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
MJE5731 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJE5731 Applications
There are a lot of ON Semiconductor
MJE5731 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE5731 More Descriptions
1.0 A, 350 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS PNP 350V 1A TO-220AB
RES SMD 750K OHM 1% 1/2W 1206
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS PNP 350V 1A TO-220AB
RES SMD 750K OHM 1% 1/2W 1206
The three parts on the right have similar specifications to MJE5731.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSeriesBase Part NumberPower - MaxFrequencyPower DissipationSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MJE5731LAST SHIPMENTS (Last Updated: 10 hours ago)Through HoleTO-220-3NO3SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLE8541.29.00.95Other Transistors-350V40W240not_compliant1A303Not Qualified1SingleCOLLECTORSWITCHING10MHzPNPPNP1V1A30 @ 300mA 10V1mATO-220AB1V @ 200mA, 1A350V10MHz1V350V5V30Non-RoHS CompliantContains Lead---------
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LAST SHIPMENTS (Last Updated: 4 days ago)Through HoleTO-220-3NO3SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)--Other Transistors-400V80W240not_compliant-8A303Not Qualified1SingleCOLLECTORSWITCHING-PNPPNP5V8A5 @ 5A 5V-TO-220AB5V @ 3A, 8A400V-2V450V6V15Non-RoHS CompliantLead FreeSWITCHMODE™MJE585280W-----
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LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleTO-220-3NO3SILICON-65°C~150°C TJTube2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLE-Other Transistors-375V40W240not_compliant-1A303Not Qualified1SingleCOLLECTORSWITCHING10MHzPNPPNP375V1A30 @ 300mA 10V1mATO-220AB1V @ 200mA, 1A375V10MHz1V350V5V30Non-RoHS CompliantContains Lead---10MHz40W---
-
-Through HoleTO-220-3----65°C~150°C TJTube---Obsolete1 (Unlimited)--------------------PNP--5 @ 5A 5V--5V @ 3A, 8A------Non-RoHS Compliant-SWITCHMODE™-80W--TO-220AB300V8A
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