STMicroelectronics MJD122T4

Name: MJD122T4
Brand: STMicroelectronics
SKU: 2845143-MJD122T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD122T4

Manufacturer:: STMicroelectronics

Ventron No:: 2845143-MJD122T4

Description:: TRANS NPN DARL 100V 8A DPAK

ECAD Model:

Datasheet:: MJD122T4

Specifications

STMicroelectronics MJD122T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD122T4.

Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
5A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
MJD122
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
20W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2V @ 15mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
4MHz
Max Breakdown Voltage
100V
Frequency - Transition
4MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
8A
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free

Description

MJD122T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 4A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 15mA, 4A.Continuous collector voltages of 8A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 8A volts.

MJD122T4 Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 2V @ 15mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 4MHz

MJD122T4 Applications
There are a lot of ON Semiconductor
MJD122T4 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD122T4 More Descriptions

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
MJD122 Series NPN 100 V 8 A Complementary Power Darlington Transistor - TO-252-3
TRANSISTOR, BJT, NPN, 100V, 8A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Trans
Darlington Transistor, Npn, 100V, To-252; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Stmicroelectronics MJD122T4
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5

Product Comparison

The three parts on the right have similar specifications to MJD122T4.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

REACH SVHC

RoHS Status

Lead Free

Factory Lead Time

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Mount

hFE Min

Radiation Hardening

View Compare
MJD122T4

STMicroelectronics

OBSOLETE (Last Updated: 1 week ago)

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Cut Tape (CT)

2005

e0

no

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn80Pb20)

8541.29.00.95

Other Transistors

100V

1.75W

GULL WING

240

not_compliant

5A

30

MJD122

3

R-PSSO-G2

Not Qualified

1

NPN

Single

20W

COLLECTOR

SWITCHING

NPN - Darlington

4V

8A

1000 @ 4A 4V

10μA

2V @ 15mA, 4A

100V

4MHz

100V

4MHz

100V

5V

8A

No SVHC

Non-RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-
MJD122-TP

Micro Commercial Co

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

-

-

-

260

-

-

10

MJD122

3

-

Not Qualified

-

-

-

-

-

-

NPN

-

-

1000 @ 4A 4V

10nA

4V @ 80mA, 8A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

12 Weeks

1.5W

100V

8A

-

-

-

-

MJD122T4 vs MJD122-TP
MJD117T4

ON Semiconductor

OBSOLETE (Last Updated: 3 days ago)

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Cut Tape (CT)

2005

e0

no

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

-

Other Transistors

-100V

1.75W

GULL WING

240

not_compliant

-2A

30

MJD117

3

R-PSSO-G2

Not Qualified

1

PNP

Single

20W

COLLECTOR

SWITCHING

PNP - Darlington

100V

2A

1000 @ 2A 3V

20μA

2V @ 8mA, 2A

100V

25MHz

100V

25MHz

100V

5V

2A

No SVHC

Non-RoHS Compliant

Lead Free

-

-

-

-

2V

-

-

-

MJD122T4 vs MJD117T4
MJD122-1

STMicroelectronics

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

SILICON

150°C TJ

Bulk

-

e3

-

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

-

Other Transistors

-

20W

-

260

-

-

30

MJD122

3

R-PSIP-T3

-

1

NPN

Single

20W

COLLECTOR

SWITCHING

NPN - Darlington

100V

8A

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

100V

-

100V

-

100V

5V

-

-

ROHS3 Compliant

Lead Free

8 Weeks

-

-

-

2V

Through Hole

100

No

MJD122T4 vs MJD122-1