ON Semiconductor MJD122G

Name: MJD122G
Brand: ON Semiconductor
SKU: 2845204-MJD122G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD122G

Manufacturer:: ON Semiconductor

Ventron No:: 2845204-MJD122G

Description:: TRANS NPN DARL 100V 8A DPAK

ECAD Model:

Datasheet:: MJD122G

Specifications

ON Semiconductor MJD122G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD122G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD122
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
4V @ 80mA, 8A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Frequency - Transition
4MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Continuous Collector Current
8A
Height
2.38mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD122G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 80mA, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.

MJD122G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz

MJD122G Applications
There are a lot of ON Semiconductor
MJD122G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD122G More Descriptions

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
Transistor, Darlington,Si,NPN,Power, Switch,Vo 100VDC,VI 5VDC,Io 8ADC,PD 20W
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2 Tab) DPAK Tube / TRANS NPN DARL 100V 8A DPAK
TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1.75W; DC Collector Current: 8A; DC Current Gain hFE: 2500hFE; Tran
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260

Product Comparison

The three parts on the right have similar specifications to MJD122G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Max Breakdown Voltage

Terminal Finish

Qualification Status

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Mount

View Compare
MJD122G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

100V

1.75W

GULL WING

260

8A

40

MJD122

3

R-PSSO-G2

1

NPN

Single

1.75W

COLLECTOR

SWITCHING

Halogen Free

NPN - Darlington

100V

8A

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

100V

4MHz

2V

4MHz

100V

5V

1000

8A

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
MJD112RLG

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

-

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

100V

1.75W

GULL WING

260

2A

40

MJD112

3

R-PSSO-G2

1

NPN

Single

-

COLLECTOR

SWITCHING

Halogen Free

NPN - Darlington

100V

2A

1000 @ 2A 3V

20μA

3V @ 40mA, 4A

100V

25MHz

2V

25MHz

100V

5V

-

2A

2.38mm

6.73mm

6.22mm

-

No

ROHS3 Compliant

Lead Free

100V

-

-

-

-

-

-

MJD122G vs MJD112RLG
MJD122-TP

Micro Commercial Co

-

12 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-

150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

-

EAR99

-

-

-

-

260

-

10

MJD122

3

-

-

-

-

-

-

-

-

NPN

-

-

1000 @ 4A 4V

10nA

4V @ 80mA, 8A

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

Matte Tin (Sn)

Not Qualified

1.5W

100V

8A

-

MJD122G vs MJD122-TP
MJD122-1

STMicroelectronics

-

8 Weeks

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-

SILICON

150°C TJ

Bulk

-

e3

-

Active

1 (Unlimited)

3

EAR99

Other Transistors

-

20W

-

260

-

30

MJD122

3

R-PSIP-T3

1

NPN

Single

20W

COLLECTOR

SWITCHING

-

NPN - Darlington

100V

8A

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

100V

-

2V

-

100V

5V

100

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

100V

Tin (Sn)

-

-

-

-

Through Hole

MJD122G vs MJD122-1

Certification

Related parts for MJD122G

MJD122T4

ON Semiconductor

TRANS NPN DARL 100V 8A DPAK
MJD148T4G

ON Semiconductor

TRANS NPN 45V 4A DPAK
MJD117T4

STMicroelectronics

TRANS PNP DARL 100V 2A D-PAK
MJD112-001

ON Semiconductor

TRANS NPN DARL 100V 2A IPAK
MJD127T4G

ON Semiconductor

TRANS PNP DARL 100V 8A DPAK
MJD127T4

STMicroelectronics

TRANS PNP DARL 100V 8A DPAK
MJD112RLG

ON Semiconductor

TRANS NPN DARL 100V 2A DPAK
MJD122-TP

Micro Commercial Co

TRANS NPN 100V 8A DPAK
MJD117T4

ON Semiconductor

TRANS PNP DARL 100V 2A DPAK
MJD122-1

STMicroelectronics

TRANS NPN DARL 100V 8A TO251

Popular Search Part Number Related Keywords Search Tags

MJD122G Price
MJD122G Picture
MJD122G Buy
MJD122G Distributor
MJD122G Image
MJD122G Inquiry
MJD122G Manufacturer
MJD122G Part
MJD122G Description
MJD122G Technical Data
MJD122G Stock
MJD122G Wholesales
MJD122G PDF
MJD122G Inventory
MJD122G Supplier
MJD122G Datasheet
MJD122G Rfq
MJD122G Specification

Part Number	Manufacturers	Description	Stock	Price
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A Automotive 3-Pin(2 Ta RoHS: Compliant	3574	1 $0.5505 10 $0.4699 100 $0.3207 1000 $0.2385 2500 $0.2032 10000 $0.1829 25000 $0.1671
MJD122G DISTI #	ON Semiconductor	TRANS NPN DARL 100V 8A DPAK RoHS: Compliant	11658	1 $0.67 75 $0.55467 150 $0.45267 525 $0.35785 1050 $0.28628
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A Automotive 3-Pin(2 Ta RoHS: Compliant	6864	51 $0.3478 250 $0.2419 500 $0.2318 2000 $0.2117 3000 $0.2066
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A Automotive 3-Pin(2 Ta RoHS: Compliant	3574	34 $0.4699 100 $0.3207 1000 $0.2376
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A Automotive 3-Pin(2 Ta RoHS: Compliant	110	10 $0.5189 50 $0.4042 100 $0.3519
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A 3-Pin(2 Tab) DPAK Rai RoHS: Compliant	2697	5400 $0.1929 5550 $0.1919 10950 $0.1899 27000 $0.1869 54000 $0.1819
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A 3-Pin(2 Tab) DPAK Rai RoHS: Compliant	0	2700 $0.29504 5400 $0.2837 8100 $0.27319 13500 $0.26343 27000 $0.25435 67500 $0.24587 135000 $0.24184
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A 3-Pin(2 Tab) DPAK Rai RoHS: Compliant	0	1 $0.64 10 $0.529 100 $0.341 500 $0.307 1000 $0.273 2500 $0.231 10000 $0.222
MJD122G DISTI #	ON Semiconductor	TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK, Transist	3311	1 $0.64 10 $0.529 100 $0.341 500 $0.307 1000 $0.273 2500 $0.231 10000 $0.222
MJD122G DISTI #	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 100V, Transistor Polarit	1800	1 $0.64 10 $0.529 100 $0.341 500 $0.307 1000 $0.273 2500 $0.231 10000 $0.222
MJD122G DISTI #	ON Semiconductor	Transistor, Darlington, Si, NPN, Power, Switc RoHS: Compliant	0	20 $0.639 40 $0.633 80 $0.626 1000 $0.62 2500 $0.614
MJD122G DISTI #	ON Semiconductor	RoHS: Not Compliant	25100	1 $0.33 25 $0.3 100 $0.29 500 $0.28 1000 $0.27
MJD122G DISTI #	ON Semiconductor	Darlington Transistors 8A 100V Bipolar Power NPN RoHS: Compliant	3063	1 $0.64 10 $0.529 100 $0.341 1000 $0.273 2500 $0.231 10000 $0.222 25000 $0.213
MJD122 DISTI #	ON Semiconductor	Darlington Transistors 8A 100V Bipolar RoHS: Not Compliant	0
MJD122G DISTI #	ON Semiconductor	MJD Series 100 V 8 A NPN Complementary Darlington RoHS: Compliant	111	100 $0.325 500 $0.24 1000 $0.23 2000 $0.225 3000 $0.22
MJD122G DISTI #	ON Semiconductor	8 A, 100 V, NPN, Si, POWER TRANSISTOR	951	1 $0.48 57 $0.24 251 $0.168
MJD122G DISTI #	ON Semiconductor	TRANS DARLINGTON NPN 100V 8A DPAK, TU	375	75 $0.381 150 $0.319 300 $0.282 750 $0.244 1500 $0.239
MJD122G DISTI #	ON Semiconductor	TRANS DARLINGTON NPN 100V 8A DPAK, PK	2706	2 $1 20 $0.49 40 $0.45 100 $0.42 200 $0.39
MJD122G DISTI #	ON Semiconductor	RoHS: Compliant	2304
MJD122G DISTI #		INSTOCK	45
MJD122G DISTI #	ON Semiconductor	TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK RoHS: Compliant	6551	5 $0.462 25 $0.429 100 $0.263 250 $0.234 500 $0.206
MJD122G DISTI #	ON Semiconductor	TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK RoHS: Compliant	5474	1 $1.02 10 $0.837 100 $0.54 1000 $0.432 2500 $0.366 10000 $0.352 25000 $0.338 50000 $0.332
MJD122G DISTI #		PowerBipolarTransistor,8AI(C),100VV(BR)CEO,1-Eleme RoHS: Compliant	15498	450 $0.3 15498 $0.2812
MJD122G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 8A 1750mW Automotive 3-P RoHS: Compliant	110	1 $2.14 50 $0.317 100 $0.276

ON Semiconductor MJD122G

Quick Request Quote

L6599D Working Principle, Application, Common Faults and Solutions

ADUM1201BRZ-RL7 Alternatives, Specifications, Application and More

SG3525 PWM IC Characteristics, Internal Structure, Working Principle and SG3525 vs SG3524

ATMEGA16A-AU Microcontroller: Characteristics, Structure, Technical Parameters and Package