MJD117G

ON Semiconductor MJD117G

Part Number:
MJD117G
Manufacturer:
ON Semiconductor
Ventron No:
2846077-MJD117G
Description:
TRANS PNP DARL 100V 2A DPAK
ECAD Model:
Datasheet:
MJD117G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Part Pictures
  • MJD117G Detail Images
Specifications
ON Semiconductor MJD117G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD117G.
  • Lifecycle Status
    ACTIVE (Last Updated: 16 hours ago)
  • Factory Lead Time
    2 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Max Power Dissipation
    1.75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -2A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD117
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    1.75W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A 3V
  • Current - Collector Cutoff (Max)
    20μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    25MHz
  • Collector Emitter Saturation Voltage
    2V
  • Frequency - Transition
    25MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    2A
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD117G Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).25MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.

MJD117G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz


MJD117G Applications
There are a lot of ON Semiconductor
MJD117G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD117G More Descriptions
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
MJD Series 100 V 2 A PNP Complementary Darlington Power Transistor - TO-252-3
BIPOLAR, TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 2A; DC Current Gain hFE: 12hFE; Transistor Case Style:
Darlington Transistor, Pnp, -100V, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD117G.
MJD117G Detail Images
Product Comparison
The three parts on the right have similar specifications to MJD117G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Contact Plating
    Surface Mount
    Max Breakdown Voltage
    View Compare
  • MJD117G
    MJD117G
    ACTIVE (Last Updated: 16 hours ago)
    2 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    -100V
    1.75W
    GULL WING
    260
    -2A
    40
    MJD117
    3
    R-PSSO-G2
    1
    PNP
    Single
    1.75W
    COLLECTOR
    SWITCHING
    Halogen Free
    PNP - Darlington
    100V
    2A
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    100V
    25MHz
    2V
    25MHz
    100V
    5V
    2A
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD117T4
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    3V @ 40mA, 4A
    PNP - Darlington
    D-Pak
    -
    20W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    25MHz
    1000 @ 2A, 3V
    20µA
    2A
    -
    -
    -
    -
    -
    -
    -
  • MJD112-001
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -65°C~150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN - Darlington
    -
    -
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    -
    -
    -
    25MHz
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    I-PAK
    1.75W
    100V
    2A
    -
    -
    -
  • MJD112RLG
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    100V
    1.75W
    GULL WING
    260
    2A
    40
    MJD112
    3
    R-PSSO-G2
    1
    NPN
    Single
    -
    COLLECTOR
    SWITCHING
    Halogen Free
    NPN - Darlington
    100V
    2A
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    100V
    25MHz
    2V
    25MHz
    100V
    5V
    2A
    2.38mm
    6.73mm
    6.22mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin
    YES
    100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.