ON Semiconductor MJD117G
- Part Number:
- MJD117G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846077-MJD117G
- Description:
- TRANS PNP DARL 100V 2A DPAK
- Datasheet:
- MJD117G
ON Semiconductor MJD117G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD117G.
- Lifecycle StatusACTIVE (Last Updated: 16 hours ago)
- Factory Lead Time2 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation1.75W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-2A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD117
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation1.75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A 3V
- Current - Collector Cutoff (Max)20μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage2V
- Frequency - Transition25MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current2A
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD117G Overview
In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).25MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
MJD117G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
MJD117G Applications
There are a lot of ON Semiconductor
MJD117G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).25MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
MJD117G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
MJD117G Applications
There are a lot of ON Semiconductor
MJD117G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD117G More Descriptions
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
MJD Series 100 V 2 A PNP Complementary Darlington Power Transistor - TO-252-3
BIPOLAR, TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 2A; DC Current Gain hFE: 12hFE; Transistor Case Style:
Darlington Transistor, Pnp, -100V, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD117G.
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
MJD Series 100 V 2 A PNP Complementary Darlington Power Transistor - TO-252-3
BIPOLAR, TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 2A; DC Current Gain hFE: 12hFE; Transistor Case Style:
Darlington Transistor, Pnp, -100V, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD117G.
The three parts on the right have similar specifications to MJD117G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Contact PlatingSurface MountMax Breakdown VoltageView Compare
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MJD117GACTIVE (Last Updated: 16 hours ago)2 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors-100V1.75WGULL WING260-2A40MJD1173R-PSSO-G21PNPSingle1.75WCOLLECTORSWITCHINGHalogen FreePNP - Darlington100V2A1000 @ 2A 3V20μA3V @ 40mA, 4A100V25MHz2V25MHz100V5V2A2.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------------------
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------------------------------------------------------100V3V @ 40mA, 4APNP - DarlingtonD-Pak-20WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount25MHz1000 @ 2A, 3V20µA2A-------
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---Through HoleTO-251-3 Short Leads, IPak, TO-251AA---65°C~150°C TJTube---Obsolete1 (Unlimited)--------------------NPN - Darlington--1000 @ 2A 3V20μA3V @ 40mA, 4A---25MHz--------Non-RoHS Compliant---------------I-PAK1.75W100V2A---
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ACTIVE (Last Updated: 3 days ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99-Other Transistors100V1.75WGULL WING2602A40MJD1123R-PSSO-G21NPNSingle-COLLECTORSWITCHINGHalogen FreeNPN - Darlington100V2A1000 @ 2A 3V20μA3V @ 40mA, 4A100V25MHz2V25MHz100V5V2A2.38mm6.73mm6.22mm-NoROHS3 CompliantLead Free------------------TinYES100V
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