ON Semiconductor MJD117
- Part Number:
- MJD117
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472119-MJD117
- Description:
- TRANS PNP DARL 100V 2A DPAK
- Datasheet:
- MJD117
ON Semiconductor MJD117 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD117.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation1.75W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-2A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJD117
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation20W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)3V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A 3V
- Current - Collector Cutoff (Max)20μA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency25MHz
- Frequency - Transition25MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current2A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MJD117 Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 2A volts is possible.
MJD117 Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
MJD117 Applications
There are a lot of ON Semiconductor
MJD117 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 2A volts is possible.
MJD117 Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
MJD117 Applications
There are a lot of ON Semiconductor
MJD117 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD117 More Descriptions
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
Complementary Darlington Power Transistors | TRANS PNP DARL 100V 2A DPAK
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
Complementary Darlington Power Transistors | TRANS PNP DARL 100V 2A DPAK
The three parts on the right have similar specifications to MJD117.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Factory Lead TimeContact PlatingSurface MountHalogen FreeCollector Emitter Saturation VoltageMax Breakdown VoltageHeightLengthWidthRadiation HardeningView Compare
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MJD117OBSOLETE (Last Updated: 1 week ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTube2009e0noObsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)Other Transistors-100V1.75WGULL WING240not_compliant-2A30MJD1173R-PSSO-G2Not Qualified1PNPSingle20WCOLLECTORSWITCHINGPNP - Darlington3V2A1000 @ 2A 3V20μA3V @ 40mA, 4A100V25MHz25MHz100V5V2ANon-RoHS CompliantContains Lead---------------
-
--Through HoleTO-251-3 Short Leads, IPak, TO-251AA---65°C~150°C TJTube---Obsolete1 (Unlimited)---------------------NPN - Darlington--1000 @ 2A 3V20μA3V @ 40mA, 4A--25MHz---Non-RoHS Compliant-I-PAK1.75W100V2A----------
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---Tape & Reel (TR)---Obsolete1 (Unlimited)---------------------PNP - Darlington--1000 @ 4A 4V10μA4V @ 80mA, 8A--4MHz---Non-RoHS Compliant-DPAK1.75W100V8A----------
-
ACTIVE (Last Updated: 3 days ago)-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99-Other Transistors100V1.75WGULL WING260-2A40MJD1123R-PSSO-G2-1NPNSingle-COLLECTORSWITCHINGNPN - Darlington100V2A1000 @ 2A 3V20μA3V @ 40mA, 4A100V25MHz25MHz100V5V2AROHS3 CompliantLead Free----8 WeeksTinYESHalogen Free2V100V2.38mm6.73mm6.22mmNo
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