MJD117

ON Semiconductor MJD117

Part Number:
MJD117
Manufacturer:
ON Semiconductor
Ventron No:
2472119-MJD117
Description:
TRANS PNP DARL 100V 2A DPAK
ECAD Model:
Datasheet:
MJD117

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  • MJD117 Detail Images
Specifications
ON Semiconductor MJD117 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD117.
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Max Power Dissipation
    1.75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -2A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MJD117
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    20W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Darlington
  • Collector Emitter Voltage (VCEO)
    3V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A 3V
  • Current - Collector Cutoff (Max)
    20μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    25MHz
  • Frequency - Transition
    25MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    2A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJD117 Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 2A volts is possible.

MJD117 Features
the DC current gain for this device is 1000 @ 2A 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz


MJD117 Applications
There are a lot of ON Semiconductor
MJD117 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD117 More Descriptions
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
Complementary Darlington Power Transistors | TRANS PNP DARL 100V 2A DPAK
MJD117 Detail Images
Product Comparison
The three parts on the right have similar specifications to MJD117.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Factory Lead Time
    Contact Plating
    Surface Mount
    Halogen Free
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • MJD117
    MJD117
    OBSOLETE (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2009
    e0
    no
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    -100V
    1.75W
    GULL WING
    240
    not_compliant
    -2A
    30
    MJD117
    3
    R-PSSO-G2
    Not Qualified
    1
    PNP
    Single
    20W
    COLLECTOR
    SWITCHING
    PNP - Darlington
    3V
    2A
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    100V
    25MHz
    25MHz
    100V
    5V
    2A
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD112-001
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -65°C~150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN - Darlington
    -
    -
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    -
    -
    25MHz
    -
    -
    -
    Non-RoHS Compliant
    -
    I-PAK
    1.75W
    100V
    2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD127T4
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PNP - Darlington
    -
    -
    1000 @ 4A 4V
    10μA
    4V @ 80mA, 8A
    -
    -
    4MHz
    -
    -
    -
    Non-RoHS Compliant
    -
    DPAK
    1.75W
    100V
    8A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD112RLG
    ACTIVE (Last Updated: 3 days ago)
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    100V
    1.75W
    GULL WING
    260
    -
    2A
    40
    MJD112
    3
    R-PSSO-G2
    -
    1
    NPN
    Single
    -
    COLLECTOR
    SWITCHING
    NPN - Darlington
    100V
    2A
    1000 @ 2A 3V
    20μA
    3V @ 40mA, 4A
    100V
    25MHz
    25MHz
    100V
    5V
    2A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    8 Weeks
    Tin
    YES
    Halogen Free
    2V
    100V
    2.38mm
    6.73mm
    6.22mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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