ON Semiconductor MJD117-1G

Name: MJD117-1G
Brand: ON Semiconductor
SKU: 2463477-MJD117-1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD117-1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463477-MJD117-1G

Description:: TRANS PNP DARL 100V 2A IPAK

ECAD Model:

Datasheet:: MJD117-1G

Specifications

ON Semiconductor MJD117-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD117-1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
1.75W
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD117
Pin Count
4
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
20W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A 3V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Frequency - Transition
25MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Height
6.22mm
Length
6.73mm
Width
2.38mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD117-1G Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.In this part, there is a transition frequency of 25MHz.The maximum collector current is 2A volts.

MJD117-1G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz

MJD117-1G Applications
There are a lot of ON Semiconductor
MJD117-1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD117-1G More Descriptions

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
2.0 A, 100 V PNP Darlington Bipolar Power Transistor
Transistor Darlington Pnp 100 Volt 2 Amp 3-Pin3 Tab Dpak-SL Rail
MJD Series 100 V 2 A Through Hole PNP Complementary Darlington Transistor
Trans Darlington PNP 100V 2A 1750mW Automotive 3-Pin(3 Tab) DPAK-3 Tube
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:2A; Power Dissipation Pd:20W; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:25Mhz; Dc Current Gain Hfe:12Hfe Rohs Compliant: Yes
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

Product Comparison

The three parts on the right have similar specifications to MJD117-1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Qualification Status

View Compare
MJD117-1G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-65°C~150°C TJ

Tube

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-100V

1.75W

260

-2A

40

MJD117

4

R-PSIP-T3

1

PNP

Single

20W

COLLECTOR

SWITCHING

Halogen Free

PNP - Darlington

100V

2A

1000 @ 2A 3V

20μA

3V @ 40mA, 4A

100V

25MHz

2V

25MHz

100V

5V

2A

6.22mm

6.73mm

2.38mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
MJD112-001

ON Semiconductor

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-

-65°C~150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NPN - Darlington

-

-

1000 @ 2A 3V

20μA

3V @ 40mA, 4A

-

-

-

25MHz

-

-

-

-

-

-

-

Non-RoHS Compliant

-

I-PAK

1.75W

100V

2A

-

MJD117-1G vs MJD112-001
MJD127T4

STMicroelectronics

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP - Darlington

-

-

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

-

-

-

4MHz

-

-

-

-

-

-

-

Non-RoHS Compliant

-

DPAK

1.75W

100V

8A

-

MJD117-1G vs MJD127T4
MJD122-TP

Micro Commercial Co

-

12 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

-

260

-

10

MJD122

3

-

-

-

-

-

-

-

-

NPN

-

-

1000 @ 4A 4V

10nA

4V @ 80mA, 8A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

1.5W

100V

8A

Not Qualified

MJD117-1G vs MJD122-TP

Certification

Related parts for MJD117-1G

MJD122T4

ON Semiconductor

TRANS NPN DARL 100V 8A DPAK
MJD148T4G

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TRANS NPN 45V 4A DPAK
MJD117T4

STMicroelectronics

TRANS PNP DARL 100V 2A D-PAK
MJD112-001

ON Semiconductor

TRANS NPN DARL 100V 2A IPAK
MJD127T4G

ON Semiconductor

TRANS PNP DARL 100V 8A DPAK
MJD127T4

STMicroelectronics

TRANS PNP DARL 100V 8A DPAK
MJD112RLG

ON Semiconductor

TRANS NPN DARL 100V 2A DPAK
MJD122-TP

Micro Commercial Co

TRANS NPN 100V 8A DPAK
MJD117T4

ON Semiconductor

TRANS PNP DARL 100V 2A DPAK
MJD122-1

STMicroelectronics

TRANS NPN DARL 100V 8A TO251

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MJD117-1G Specification

Part Number	Manufacturers	Description	Stock	Price
MJD117-1G DISTI #	ON Semiconductor	Trans Darlington PNP 100V 2A Automotive 3-Pin(3 Ta RoHS: Compliant	200	1 $0.4686 10 $0.4007 100 $0.2841 1000 $0.2244 2500 $0.1959 10000 $0.1905 25000 $0.1824 50000 $0.1782
MJD117-1G DISTI #	ON Semiconductor	TRANS PNP DARL 100V 2A IPAK RoHS: Compliant	2550	1 $0.68 75 $0.54347 150 $0.4348 525 $0.34166 1050 $0.264
MJD117-1G DISTI #	ON Semiconductor	Trans Darlington PNP 100V 2A Automotive 3-Pin(3 Ta RoHS: Compliant	200	36 $0.4007 100 $0.2841
MJD117-1G DISTI #	ON Semiconductor	Trans Darlington PNP 100V 2A 3-Pin(3 Tab) DPAK-3 R RoHS: Compliant	525	75 $0.2529 150 $0.2069 300 $0.1899 450 $0.1749 750 $0.1619
MJD117-1G DISTI #	ON Semiconductor	Trans Darlington PNP 100V 2A 3-Pin(3 Tab) DPAK-3 R RoHS: Compliant	0	2400 $0.1759 2550 $0.1749 4950 $0.1729 12000 $0.1699 24000 $0.1659
MJD117-1G DISTI #	ON Semiconductor	TRANSISTOR, PNP, -100V, -2A, TO-252, Transistor P	2019	1 $0.601 10 $0.48 100 $0.325 500 $0.281 1000 $0.245 2500 $0.199 10000 $0.192
MJD117-1G. DISTI #	ON Semiconductor	Transistor Polarity:PNP, Collector Emitter Voltag	0	1 $0.176 2550 $0.175 4950 $0.173 12000 $0.17 24000 $0.166
MJD117-1G DISTI #	ON Semiconductor	MJD Series 100 V 2 A Through Hole PNP Complementar RoHS: Compliant	5250	25 $0.43 300 $0.39 1750 $0.33
MJD117-1G DISTI #	ON Semiconductor	RoHS: Not Compliant	206183	1 $0.43 25 $0.4 100 $0.39 500 $0.37 1000 $0.35
MJD117-1G DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power PNP RoHS: Compliant	6378	1 $0.65 10 $0.534 100 $0.326 1000 $0.252 2500 $0.215 10000 $0.2 25000 $0.19
MJD117-1G DISTI #	ON Semiconductor	TRANSISTOR, PNP, -100V, -2A, TO-252 RoHS: Compliant	2019	5 $0.867 25 $0.743 100 $0.507 250 $0.416 500 $0.341 1000 $0.315 5000 $0.297
MJD117-1G DISTI #	ON Semiconductor	TRANSISTOR, PNP, -100V, -2A, TO-252 RoHS: Compliant	2019	5 $0.462 25 $0.428 100 $0.249 250 $0.221 500 $0.193
MJD117-1G DISTI #	ON Semiconductor	Trans Darlington PNP 100V 2A 1750mW Automotive 3-P RoHS: Compliant	200	10 $0.3867 100 $0.2833
MJD117-1G DISTI #		Power Bipolar Transistor, 5A I(C), 100VV(BR)CEO,1- RoHS: Compliant	2378	300 $0.5733 2378 $0.5375
MJD117-1G DISTI #	ON Semiconductor	Complementary Darlington Power Transistors	19	1 $0.37 100 $0.29 500 $0.26 1000 $0.25

MJD117~~(13)~~
MJD11~~(29)~~
MJD1~~(62)~~
MJD~~(114)~~

ON Semiconductor MJD117-1G

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