ON Semiconductor MJD112-1G

Name: MJD112-1G
Brand: ON Semiconductor
SKU: 2463441-MJD112-1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD112-1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463441-MJD112-1G

Description:: TRANS NPN DARL 100V 2A IPAK

ECAD Model:

Datasheet:: MJD112-1G

Specifications

ON Semiconductor MJD112-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD112-1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
20W
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD112
Pin Count
4
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A 3V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Frequency - Transition
25MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Height
6.22mm
Length
6.73mm
Width
2.38mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD112-1G Overview
DC current gain in this device equals 1000 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 2A volts.

MJD112-1G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112-1G Applications
There are a lot of ON Semiconductor
MJD112-1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD112-1G More Descriptions

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
ON Semi MJD112-1G NPN Darlington Transistor; 2 A 100 V HFE:1000; 3-Pin IPAK
MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor
Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(3 Tab) IPAK Tube
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto
DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:100V RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to MJD112-1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Qualification Status

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Terminal Form

Reach Compliance Code

Max Breakdown Voltage

Mount

hFE Min

View Compare
MJD112-1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

8 Weeks

Tin

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

100V

20W

260

2A

40

MJD112

4

R-PSIP-T3

1

NPN

Single

1.75W

COLLECTOR

SWITCHING

Halogen Free

NPN - Darlington

100V

2A

1000 @ 2A 3V

20μA

3V @ 40mA, 4A

100V

25MHz

2V

25MHz

100V

5V

2A

6.22mm

6.73mm

2.38mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
MJD122-TP

Micro Commercial Co

-

12 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

-

EAR99

-

-

-

260

-

10

MJD122

3

-

-

-

-

-

-

-

-

NPN

-

-

1000 @ 4A 4V

10nA

4V @ 80mA, 8A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

Not Qualified

1.5W

100V

8A

-

-

-

-

-

MJD112-1G vs MJD122-TP
MJD117T4

ON Semiconductor

OBSOLETE (Last Updated: 3 days ago)

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Cut Tape (CT)

2005

e0

no

Obsolete

1 (Unlimited)

2

EAR99

Other Transistors

-100V

1.75W

240

-2A

30

MJD117

3

R-PSSO-G2

1

PNP

Single

20W

COLLECTOR

SWITCHING

-

PNP - Darlington

100V

2A

1000 @ 2A 3V

20μA

2V @ 8mA, 2A

100V

25MHz

2V

25MHz

100V

5V

2A

-

-

-

No SVHC

-

Non-RoHS Compliant

Lead Free

Tin/Lead (Sn/Pb)

Not Qualified

-

-

-

GULL WING

not_compliant

100V

-

-

MJD112-1G vs MJD117T4
MJD122-1

STMicroelectronics

-

8 Weeks

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

SILICON

150°C TJ

Bulk

-

e3

-

Active

1 (Unlimited)

3

EAR99

Other Transistors

-

20W

260

-

30

MJD122

3

R-PSIP-T3

1

NPN

Single

20W

COLLECTOR

SWITCHING

-

NPN - Darlington

100V

8A

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

100V

-

2V

-

100V

5V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

Tin (Sn)

-

-

-

-

-

-

100V

Through Hole

100

MJD112-1G vs MJD122-1

Certification

Related parts for MJD112-1G

MJD122T4

ON Semiconductor

TRANS NPN DARL 100V 8A DPAK
MJD148T4G

ON Semiconductor

TRANS NPN 45V 4A DPAK
MJD117T4

STMicroelectronics

TRANS PNP DARL 100V 2A D-PAK
MJD112-001

ON Semiconductor

TRANS NPN DARL 100V 2A IPAK
MJD127T4G

ON Semiconductor

TRANS PNP DARL 100V 8A DPAK
MJD127T4

STMicroelectronics

TRANS PNP DARL 100V 8A DPAK
MJD112RLG

ON Semiconductor

TRANS NPN DARL 100V 2A DPAK
MJD122-TP

Micro Commercial Co

TRANS NPN 100V 8A DPAK
MJD117T4

ON Semiconductor

TRANS PNP DARL 100V 2A DPAK
MJD122-1

STMicroelectronics

TRANS NPN DARL 100V 8A TO251

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MJD112-1G Specification

Part Number	Manufacturers	Description	Stock	Price
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(3 Ta RoHS: Compliant	24	1 $0.4635 10 $0.4063 100 $0.2836 500 $0.2828 1000 $0.2271
MJD112-1G DISTI #	ON Semiconductor	TRANS NPN DARL 100V 2A IPAK RoHS: Compliant	0	1 $0.68 75 $0.54467 150 $0.43573 525 $0.34234 1050 $0.26453
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	14	10 $0.372
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	24	2475 $0.34
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	24	10 $0.3997
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3 Tab) IPAK Rai RoHS: Compliant	2925	75 $0.2539 150 $0.2069 300 $0.1899 450 $0.1749 750 $0.1629
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3 Tab) IPAK Rai RoHS: Compliant	0	2475 $0.1759 2625 $0.1749 5100 $0.1729 12375 $0.1709 24750 $0.1669
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3 Tab) IPAK Rai RoHS: Compliant	0	2475 $0.26018 4950 $0.25017 7425 $0.2409 12375 $0.2323 24750 $0.22429 61875 $0.21681 123750 $0.21326
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(3 Tab) IPAK Rai RoHS: Compliant	0	1 $0.65 10 $0.536 100 $0.327 500 $0.29 1000 $0.252 2500 $0.215 10000 $0.201
MJD112-1G DISTI #	ON Semiconductor	DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3, Transis	0	1 $0.156 10 $0.156 100 $0.156 500 $0.156 1000 $0.156 2500 $0.156 10000 $0.156
MJD112-1G DISTI #	ON Semiconductor		343	1 $0.65 10 $0.536 100 $0.327 500 $0.29 1000 $0.252 2500 $0.215 10000 $0.201
MJD112-1G DISTI #	ON Semiconductor	ON Semi MJD112-1G NPN Darlington Transistor, 2 A RoHS: Compliant	0	30 $0.24 75 $0.23 150 $0.22 300 $0.2
MJD112-1G DISTI #	ON Semiconductor	RoHS: Not Compliant	1286366	1 $0.34 25 $0.32 100 $0.31 500 $0.29 1000 $0.28
MJD112G DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant	3415	1 $0.63 10 $0.523 100 $0.319 1000 $0.247 2500 $0.21 10000 $0.196 25000 $0.186
MJD112-1G DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant	0	1 $0.65 10 $0.536 100 $0.327 1000 $0.252 2500 $0.215 10000 $0.201 25000 $0.19
MJD112-1G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(3 Ta RoHS: Compliant	100	80 $0.66 250 $0.486 500 $0.306 1000 $0.244 2500 $0.234 10000 $0.199 25000 $0.195 50000 $0.181
MJD112-1G DISTI #	ON Semiconductor		73
MJD112-1G DISTI #	ON Semiconductor	NPN DARLINGTON POWER TRANS. 100V 2A IPAK, TU	780	30 $0.349 75 $0.297 150 $0.245 300 $0.225
MJD112-1G DISTI #	ON Semiconductor	NPN DARLINGTON POWER TRANS. 100V 2A IPAK, PK	75	15 $0.402 30 $0.349 75 $0.297 150 $0.245 300 $0.225
MJD112-1G DISTI #	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, TO-251 RoHS: Compliant	348	5 $0.464 25 $0.43 100 $0.249 250 $0.221 500 $0.193
MJD112-1G DISTI #	ON Semiconductor	TRANSISTOR, NPN, 100V, 2A, TO-251 RoHS: Compliant	343	1 $1.03 10 $0.849 100 $0.518 1000 $0.399 2500 $0.341 10000 $0.319 25000 $0.301 50000 $0.294
MJD112-1G. DISTI #	ON Semiconductor	DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3 RoHS: Compliant	0	1 $1.03 10 $0.849 100 $0.518 1000 $0.399 2500 $0.341 10000 $0.319 25000 $0.301 50000 $0.294
MJD112-1G DISTI #	ON Semiconductor	Complementary Darlington Power Transistors	65	1 $0.36 100 $0.28 500 $0.25 1000 $0.24

MJD112~~(20)~~
MJD11~~(29)~~
MJD1~~(62)~~
MJD~~(114)~~

ON Semiconductor MJD112-1G

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