ON Semiconductor MJ15001G
- Part Number:
- MJ15001G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585296-MJ15001G
- Description:
- TRANS NPN 140V 15A TO-3
- ECAD Model:
-
- Datasheet:
- MJ15001G
ON Semiconductor MJ15001G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ15001G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC140V
- Max Power Dissipation200W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency2MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product2MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 4A 2V
- Current - Collector Cutoff (Max)250μA
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 4A
- Collector Emitter Breakdown Voltage140V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ15001G Overview
This device has a DC current gain of 25 @ 4A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 400mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A maximum collector current of 15A volts is possible.
MJ15001G Features
the DC current gain for this device is 25 @ 4A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 2MHz
MJ15001G Applications
There are a lot of ON Semiconductor
MJ15001G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 25 @ 4A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 400mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A maximum collector current of 15A volts is possible.
MJ15001G Features
the DC current gain for this device is 25 @ 4A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 2MHz
MJ15001G Applications
There are a lot of ON Semiconductor
MJ15001G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ15001G More Descriptions
15 A, 140 V, NPN Bipolar Power Transistor
Trans GP BJT NPN 140V 15A 200000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,Power,VCEO 140VDC,IC 15A,PD 200W,TO-204AA (TO-3) | ON Semiconductor MJ15001G
BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:2MHz; Power Dissipation Pd:200mW; DC
The MJ15001 and MJ15002 are EpiBase power transistors designed for h power audio disk head positioners and other linear applications.
BIPOLAR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 140V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 200mW; DC Collector Current: 15A; DC Current Gain hFE: 25hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 15A; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 25; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C; Termination Type: Through Hole
Trans GP BJT NPN 140V 15A 200000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Transistor, Bipolar,Si,NPN,Power,VCEO 140VDC,IC 15A,PD 200W,TO-204AA (TO-3) | ON Semiconductor MJ15001G
BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency ft:2MHz; Power Dissipation Pd:200mW; DC
The MJ15001 and MJ15002 are EpiBase power transistors designed for h power audio disk head positioners and other linear applications.
BIPOLAR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 140V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 200mW; DC Collector Current: 15A; DC Current Gain hFE: 25hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 15A; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 25; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 200°C; Termination Type: Through Hole
The three parts on the right have similar specifications to MJ15001G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingView Compare
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MJ15001GACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2005e3yesActive1 (Unlimited)2Through HoleEAR99Tin (Sn)Other Transistors140V200WBOTTOMPIN/PEG26015A2MHz4021Single200WCOLLECTORAMPLIFIER2MHzNPNNPN140V15A25 @ 4A 2V250μA1V @ 400mA, 4A140V2MHz1V140V5V258.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free-- -
ACTIVE (Last Updated: 4 days ago)2 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2-EAR99Tin (Sn)Other Transistors-200V250WBOTTOMPIN/PEG--16A4MHz-21Single250WCOLLECTORAMPLIFIER4MHzPNPPNP200V16A15 @ 8A 4V500μA4V @ 3.2A, 16A200V4MHz1.4V350V5V1526.67mm39.37mm8.509mmNo SVHCNoROHS3 CompliantLead Free-
-
ACTIVE (Last Updated: 2 days ago)5 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2002e3yesActive1 (Unlimited)2-EAR99-Other Transistors140V250WBOTTOMPIN/PEG26020A2MHz4021Single250WCOLLECTORAMPLIFIER2MHzNPNNPN140V20A25 @ 5A 2V250μA1V @ 500mA, 5A140V2MHz1V140V5V258.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead FreeTin
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ACTIVE (Last Updated: 3 days ago)4 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2-EAR99Tin (Sn)Other Transistors250V250WBOTTOMPIN/PEG-16A4MHz-21Single250WCOLLECTORAMPLIFIER4MHzNPNNPN250V16A15 @ 8A 4V500μA4V @ 3.2A, 16A250V4MHz1.4V400V5V158.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free-
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