ON Semiconductor MJ15022G
- Part Number:
- MJ15022G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846048-MJ15022G
- Description:
- TRANS NPN 200V 16A TO3
- Datasheet:
- MJ15022G
ON Semiconductor MJ15022G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ15022G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC200V
- Max Power Dissipation250W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Current Rating16A
- Frequency4MHz
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product4MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current16A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 8A 4V
- Current - Collector Cutoff (Max)500μA
- Vce Saturation (Max) @ Ib, Ic4V @ 3.2A, 16A
- Collector Emitter Breakdown Voltage200V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage1.4V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- Height8.51mm
- Length39.37mm
- Width26.67mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJ15022G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15022G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJ15022G Applications
There are a lot of ON Semiconductor
MJ15022G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 8A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 16A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 16A volts at Single BJT transistors maximum.
MJ15022G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz
MJ15022G Applications
There are a lot of ON Semiconductor
MJ15022G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ15022G More Descriptions
ON Semi NPN Bipolar Transistor 16 A 200 V 3-Pin TO-204 | ON Semiconductor MJ15022G
16 A, 200 V, NPN Bipolar Power Transistor
Bipolar (Bjt) Single Transistor, Audio, Npn, 200 V, 4 Mhz, 250 W, 16 A, 60 Rohs Compliant: Yes |Onsemi MJ15022G
Trans GP BJT NPN 200V 16A 3-Pin(2 Tab) TO-204 Tray - Trays
Power Bipolar Transistor, 16A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 200 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 60hFE; Transistor Case Style
The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.
16 A, 200 V, NPN Bipolar Power Transistor
Bipolar (Bjt) Single Transistor, Audio, Npn, 200 V, 4 Mhz, 250 W, 16 A, 60 Rohs Compliant: Yes |Onsemi MJ15022G
Trans GP BJT NPN 200V 16A 3-Pin(2 Tab) TO-204 Tray - Trays
Power Bipolar Transistor, 16A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 200 V 16 A Screw Mount NPN Silicon Power Transistor - TO-204AA
TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 250W; DC Collector Current: 16A; DC Current Gain hFE: 60hFE; Transistor Case Style
The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio disk head positioners and other linear applications.
The three parts on the right have similar specifications to MJ15022G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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MJ15022GACTIVE (Last Updated: 4 days ago)2 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors200V250WBOTTOMPIN/PEG16A4MHz21Single250WCOLLECTORAMPLIFIER4MHzNPNNPN200V16A15 @ 8A 4V500μA4V @ 3.2A, 16A200V4MHz1.4V350V5V158.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free----
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ACTIVE (Last Updated: 1 day ago)4 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors-250V250WBOTTOMPIN/PEG-16A4MHz21Single250WCOLLECTORAMPLIFIER4MHzPNPPNP250V16A15 @ 8A 4V500μA4V @ 3.2A, 16A250V4MHz1.4V400V5V158.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free---
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ACTIVE (Last Updated: 2 days ago)12 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2EAR99-Other Transistors120V180WBOTTOMPIN/PEG15A6MHz21Single180WCOLLECTORSWITCHING6MHzPNPNPN120V15A10 @ 4A 2V100μA5V @ 7A, 15A120V0.8MHz1.1V200V7V108.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead FreeTin26040
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ACTIVE (Last Updated: 3 days ago)4 WeeksThrough HoleTO-204AA, TO-3NO24.535924gSILICON-65°C~200°C TJTray2006e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors250V250WBOTTOMPIN/PEG16A4MHz21Single250WCOLLECTORAMPLIFIER4MHzNPNNPN250V16A15 @ 8A 4V500μA4V @ 3.2A, 16A250V4MHz1.4V400V5V158.51mm39.37mm26.67mmNo SVHCNoROHS3 CompliantLead Free---
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