ON Semiconductor MJ15002
- Part Number:
- MJ15002
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468234-MJ15002
- Description:
- TRANS PNP 140V 15A TO-3
- ECAD Model:
-
- Datasheet:
- MJ15002
ON Semiconductor MJ15002 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ15002.
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeO-MBFM-P2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max200W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 4A 2V
- Current - Collector Cutoff (Max)250μA
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 4A
- Voltage - Collector Emitter Breakdown (Max)140V
- Current - Collector (Ic) (Max)15A
- Transition Frequency2MHz
- Frequency - Transition2MHz
- RoHS StatusNon-RoHS Compliant
MJ15002 Overview
This device has a DC current gain of 25 @ 4A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 400mA, 4A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 2MHz.Collector Emitter Breakdown occurs at 140VV - Maximum voltage.
MJ15002 Features
the DC current gain for this device is 25 @ 4A 2V
the vce saturation(Max) is 1V @ 400mA, 4A
a transition frequency of 2MHz
MJ15002 Applications
There are a lot of Rochester Electronics, LLC
MJ15002 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 25 @ 4A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 400mA, 4A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 2MHz.Collector Emitter Breakdown occurs at 140VV - Maximum voltage.
MJ15002 Features
the DC current gain for this device is 25 @ 4A 2V
the vce saturation(Max) is 1V @ 400mA, 4A
a transition frequency of 2MHz
MJ15002 Applications
There are a lot of Rochester Electronics, LLC
MJ15002 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJ15002 More Descriptions
Tray Through Hole PNP Single Bipolar (BJT) Transistor 25 @ 4A 2V 250muA 200W 2MHz
Power Bipolar Transistor, 15A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Bipolar Transistor; Package/Case:TO-204; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:15A; Voltage Rating:140V RoHS Compliant: No
Power Bipolar Transistor, 15A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin
Bipolar Transistor; Package/Case:TO-204; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:15A; Voltage Rating:140V RoHS Compliant: No
The three parts on the right have similar specifications to MJ15002.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyPin CountElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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MJ15002Through HoleTO-204AA, TO-3NOSILICON-65°C~200°C TJTraye0yesObsolete3 (168 Hours)2TIN LEADBOTTOMPIN/PEG24030O-MBFM-P2COMMERCIAL1SINGLECOLLECTOR200WSWITCHINGPNPPNP25 @ 4A 2V250μA1V @ 400mA, 4A140V15A2MHz2MHzNon-RoHS Compliant------------------------------ -
Through HoleTO-204AA, TO-3NOSILICON-65°C~200°C TJTraye3yesActive1 (Unlimited)2-BOTTOMPIN/PEG26040--1-COLLECTOR-AMPLIFIERNPNNPN25 @ 5A 2V250μA1V @ 500mA, 5A--2MHz-ROHS3 CompliantACTIVE (Last Updated: 2 days ago)5 WeeksTin24.535924g2002EAR99Other Transistors140V250W20A2MHz2Single250W2MHz140V20A140V1V140V5V258.51mm39.37mm26.67mmNo SVHCNoLead Free
-
Through HoleTO-204AA, TO-3NOSILICON-65°C~200°C TJTraye3yesActive1 (Unlimited)2Tin (Sn)BOTTOMPIN/PEG----1-COLLECTOR-AMPLIFIERNPNNPN15 @ 8A 4V500μA4V @ 3.2A, 16A--4MHz-ROHS3 CompliantACTIVE (Last Updated: 4 days ago)2 Weeks-24.535924g2006EAR99Other Transistors200V250W16A4MHz2Single250W4MHz200V16A200V1.4V350V5V158.51mm39.37mm26.67mmNo SVHCNoLead Free
-
Through HoleTO-204AA, TO-3NOSILICON-65°C~200°C TJTraye3yesActive1 (Unlimited)2Tin (Sn)BOTTOMPIN/PEG----1-COLLECTOR-AMPLIFIERNPNNPN15 @ 8A 4V500μA4V @ 3.2A, 16A--4MHz-ROHS3 CompliantACTIVE (Last Updated: 3 days ago)4 Weeks-24.535924g2006EAR99Other Transistors250V250W16A4MHz2Single250W4MHz250V16A250V1.4V400V5V158.51mm39.37mm26.67mmNo SVHCNoLead Free
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