Fairchild/ON Semiconductor KSA1220YSTU
- Part Number:
- KSA1220YSTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467781-KSA1220YSTU
- Description:
- TRANS PNP 120V 1.2A TO-126
- Datasheet:
- KSA1220YSTU
Fairchild/ON Semiconductor KSA1220YSTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1220YSTU.
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1.2W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 300mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 200mA, 1A
- Voltage - Collector Emitter Breakdown (Max)120V
- Current - Collector (Ic) (Max)1.2A
- Transition Frequency175MHz
- Frequency - Transition175MHz
- RoHS StatusROHS3 Compliant
KSA1220YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 300mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 200mA, 1A.A transition frequency of 175MHz is present in the part.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.
KSA1220YSTU Features
the DC current gain for this device is 160 @ 300mA 5V
the vce saturation(Max) is 700mV @ 200mA, 1A
a transition frequency of 175MHz
KSA1220YSTU Applications
There are a lot of Rochester Electronics, LLC
KSA1220YSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 300mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 200mA, 1A.A transition frequency of 175MHz is present in the part.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.
KSA1220YSTU Features
the DC current gain for this device is 160 @ 300mA 5V
the vce saturation(Max) is 700mV @ 200mA, 1A
a transition frequency of 175MHz
KSA1220YSTU Applications
There are a lot of Rochester Electronics, LLC
KSA1220YSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1220YSTU More Descriptions
Tube Through Hole PNP KSA1220 Bipolar (BJT) Transistor 160 @ 300mA 5V 1.2A 1.2W 175MHz
Compliant Through Hole 60 PNP 175 MHz Lead Free TO-126 -1.2 A
PNP Epitaxial Silicon Transistor
IC EEPROM 2K I2C 400KHZ 8-DIP-T
Compliant Through Hole 60 PNP 175 MHz Lead Free TO-126 -1.2 A
PNP Epitaxial Silicon Transistor
IC EEPROM 2K I2C 400KHZ 8-DIP-T
The three parts on the right have similar specifications to KSA1220YSTU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Radiation HardeningLead FreeView Compare
-
KSA1220YSTUThrough HoleTO-225AA, TO-126-3NOSILICON150°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE1.2WAMPLIFIERPNPPNP160 @ 300mA 5V1μA ICBO700mV @ 200mA, 1A120V1.2A175MHz175MHzROHS3 Compliant------------------------
-
Through HoleTO-225AA, TO-126-3-SILICON150°C TJBulke3yesActive1 (Unlimited)3Tin (Sn)------1--SWITCHINGPNPPNP100 @ 100mA 5V100μA ICBO1V @ 10mA, 100mA----ROHS3 CompliantACTIVE (Last Updated: 20 hours ago)6 WeeksThrough Hole3761mgEAR99Other Transistors-400V1W-500mAKSA1156Single1W400V500mA400V-1V-400V-7V305000nsNoLead Free
-
Through HoleTO-226-3, TO-92-3 Short Body--150°C TJTape & Box (TB)--Obsolete1 (Unlimited)----------250mW--PNP200 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA50V150mA-180MHz-----------KSA1175------------
-
Through HoleTO-226-3, TO-92-3 Short Body--150°C TJBulk--Obsolete1 (Unlimited)----------300mW--PNP300 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50mA-100MHz-----------KSA1174------------
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