Fairchild/ON Semiconductor KSA1220AYSTSTU
- Part Number:
- KSA1220AYSTSTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467824-KSA1220AYSTSTU
- Description:
- TRANS PNP 160V 1.2A TO-126
- ECAD Model:
-
- Datasheet:
- KSA1220AYSTSTU
Fairchild/ON Semiconductor KSA1220AYSTSTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1220AYSTSTU.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Weight758mg
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-160V
- Max Power Dissipation1.2W
- Current Rating-1.2A
- Frequency175MHz
- Base Part NumberKSA1220
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.2W
- Gain Bandwidth Product175MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 300mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 200mA, 1A
- Collector Emitter Breakdown Voltage160V
- Collector Emitter Saturation Voltage-400mV
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-5V
- hFE Min60
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
KSA1220AYSTSTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 300mA 5V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.2A.A maximum collector current of 1.2A volts can be achieved.
KSA1220AYSTSTU Features
the DC current gain for this device is 160 @ 300mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.2A
KSA1220AYSTSTU Applications
There are a lot of ON Semiconductor
KSA1220AYSTSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 300mA 5V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.2A.A maximum collector current of 1.2A volts can be achieved.
KSA1220AYSTSTU Features
the DC current gain for this device is 160 @ 300mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.2A
KSA1220AYSTSTU Applications
There are a lot of ON Semiconductor
KSA1220AYSTSTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1220AYSTSTU More Descriptions
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
PNP Epitaxial Silicon Transistor
TRANS PNP 160V 1.2A TO-126
RAIL / PNP/160V/1.2A
Contact for details
PNP Epitaxial Silicon Transistor
TRANS PNP 160V 1.2A TO-126
RAIL / PNP/160V/1.2A
Contact for details
The three parts on the right have similar specifications to KSA1220AYSTSTU.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionView Compare
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KSA1220AYSTSTUThrough HoleThrough HoleTO-225AA, TO-126-3758mg150°C TJTubeObsolete1 (Unlimited)-160V1.2W-1.2A175MHzKSA12201Single1.2W175MHzPNP700mV1.2A160 @ 300mA 5V1μA ICBO700mV @ 200mA, 1A160V-400mV-160V-5V60RoHS CompliantLead Free---------------------- -
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA-150°C TJTubeObsolete1 (Unlimited)-----1---PNP--160 @ 500mA 2V100μA ICBO1V @ 100mA, 4A-----ROHS3 Compliant-NOSILICONe3yes3MATTE TINSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSIP-T3COMMERCIALSINGLE10WAMPLIFIERPNP20V5A180MHz180MHz
-
-Through HoleTO-226-3, TO-92-3 Short Body-150°C TJBulkObsolete1 (Unlimited)----KSA1174----PNP--200 @ 1mA 6V1μA300mV @ 1mA, 10mA---------------------300mW--120V50mA-100MHz
-
-Through HoleTO-226-3, TO-92-3 Short Body-150°C TJTape & Box (TB)Obsolete1 (Unlimited)----KSA1175----PNP--200 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA---------------------250mW--50V150mA-180MHz
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