Fairchild/ON Semiconductor KSA1015GRBU
- Part Number:
- KSA1015GRBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847019-KSA1015GRBU
- Description:
- TRANS PNP 50V 0.15A TO-92
- ECAD Model:
-
- Datasheet:
- KSA1015GRBU
Fairchild/ON Semiconductor KSA1015GRBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1015GRBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max400mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)150mA
- Transition Frequency80MHz
- Frequency - Transition80MHz
- RoHS StatusROHS3 Compliant
KSA1015GRBU Overview
DC current gain in this device equals 200 @ 2mA 6V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.As a result, the part has a transition frequency of 80MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSA1015GRBU Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz
KSA1015GRBU Applications
There are a lot of Rochester Electronics, LLC
KSA1015GRBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 2mA 6V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.As a result, the part has a transition frequency of 80MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSA1015GRBU Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz
KSA1015GRBU Applications
There are a lot of Rochester Electronics, LLC
KSA1015GRBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1015GRBU More Descriptions
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92-3
Bipolar Transistors - BJT PNP Epitaxial Sil
Compliant Through Hole 178.2 mg 70 PNP 80 MHz Lead Free TO-92
Bipolar Transistors - BJT PNP Epitaxial Sil
Compliant Through Hole 178.2 mg 70 PNP 80 MHz Lead Free TO-92
The three parts on the right have similar specifications to KSA1015GRBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusBase Part NumberLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
-
KSA1015GRBUThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLENOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE400mWAMPLIFIERPNPPNP200 @ 2mA 6V100nA ICBO300mV @ 10mA, 100mA50V150mA80MHz80MHzROHS3 Compliant------------------------------- -
Through HoleTO-226-3, TO-92-3 Short Body--150°C TJBulk--Obsolete1 (Unlimited)---------300mW--PNP200 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50mA-100MHz-KSA1174-----------------------------
-
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)-SILICON150°C TJTape & Box (TB)e3yesActive1 (Unlimited)3Tin (Sn)BOTTOM----1--AMPLIFIERPNPPNP160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA--50MHz-ROHS3 CompliantKSA1013ACTIVE (Last Updated: 17 hours ago)6 WeeksThrough Hole3371.1027mg2013EAR99Other Transistors-160V900mW-1A50MHzSingle900mW50MHz160V1A160V-1.5V160V-160V-6V608.2mm5.1mm4.1mmNo SVHCNoLead Free
-
Through HoleTO-226-3, TO-92-3 Short Body--150°C TJTape & Box (TB)--Obsolete1 (Unlimited)---------250mW--PNP200 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA50V150mA-180MHz-KSA1175-----------------------------
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