Fairchild/ON Semiconductor KSA1013YBU
- Part Number:
- KSA1013YBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068732-KSA1013YBU
- Description:
- TRANS PNP 160V 1A TO-92L
- Datasheet:
- KSA1013YBU
Fairchild/ON Semiconductor KSA1013YBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1013YBU.
- Lifecycle StatusACTIVE (Last Updated: 17 hours ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body
- Number of Pins3
- Weight185mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-160V
- Max Power Dissipation900mW
- Terminal PositionBOTTOM
- Current Rating-1A
- Frequency50MHz
- Base Part NumberKSA1013
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation900mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 200mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-1.5V
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-6V
- hFE Min60
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA1013YBU Overview
In this device, the DC current gain is 60 @ 200mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSA1013YBU Features
the DC current gain for this device is 60 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YBU Applications
There are a lot of ON Semiconductor
KSA1013YBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 60 @ 200mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSA1013YBU Features
the DC current gain for this device is 60 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YBU Applications
There are a lot of ON Semiconductor
KSA1013YBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1013YBU More Descriptions
KSA1013 Series 160 V 1 A Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT PNP 160V 1A 900mW 3-Pin TO-92L Bag
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Bipolar Transistors - BJT PNP Epitaxial Sil
TRANS, BIPOL, PNP, -160V, TO-226AA-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -160V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 900mW; DC Collector Current: -1A; DC Current Gain hFE: 160hFE; Tr
Trans GP BJT PNP 160V 1A 900mW 3-Pin TO-92L Bag
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Bipolar Transistors - BJT PNP Epitaxial Sil
TRANS, BIPOL, PNP, -160V, TO-226AA-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -160V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 900mW; DC Collector Current: -1A; DC Current Gain hFE: 160hFE; Tr
The three parts on the right have similar specifications to KSA1013YBU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreePublishedTerminal FinishHeightLengthWidthTurn Off Time-Max (toff)Power - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KSA1013YBUACTIVE (Last Updated: 17 hours ago)6 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body3185mgSILICON150°C TJBulke3yesActive1 (Unlimited)3EAR99Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A60 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V160V-160V-6V60No SVHCNoROHS3 CompliantLead Free-----------
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ACTIVE (Last Updated: 17 hours ago)6 Weeks-Through HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)e3yesActive1 (Unlimited)3EAR99Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V160V-160V-6V60No SVHCNoROHS3 CompliantLead Free2013Tin (Sn)8.2mm5.1mm4.1mm-----
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ACTIVE (Last Updated: 20 hours ago)6 Weeks-Through HoleThrough HoleTO-225AA, TO-126-33761mgSILICON150°C TJBulke3yesActive1 (Unlimited)3EAR99Other Transistors-400V1W--500mA-KSA11561Single1WSWITCHING-PNPPNP400V500mA100 @ 100mA 5V100μA ICBO1V @ 10mA, 100mA400V--1V--400V-7V30-NoROHS3 CompliantLead Free-Tin (Sn)---5000ns----
-
----Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk--Obsolete1 (Unlimited)--------KSA1174------PNP--300 @ 1mA 6V1μA300mV @ 1mA, 10mA-----------------300mW120V50mA100MHz
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